PMC

Output performance of self-charge excitation triboelectric nanogenerator. a The dynamic output charge process of SCE-TENG without voltage stabilization element under 1 Hz operation frequency. b The ECD versus operation cycles. c The detailed output charge curve from the dashed area. d The dynamic output charge accumulation process of SCE-TENG with voltage stabilization element under 1 Hz operation frequency. e The ECD versus operation cycles. f The detailed output charge curve from the dashed area. g, h Dynamic current and voltage output of SCE-TENG with voltage stabilization under 4 Hz operation frequency, respectively, and the right side of each is the enlarged saturated output curve. i ECD of SCE-TENG under various operation frequencies with/without voltage stabilization. j Current and voltage output of SCE-TENG under various operation frequencies with voltage stabilization. k The current, voltage and power output of SCE-TENG with voltage stabilization under various external load (sinusoidal motion with 4 Hz frequency). The thickness of the dielectric Kapton film here is 9 μm

(a) The overall SC voltage curves during charging and ECD operation. (b) Zoom-in to the voltage recovery related to re-organization in the electric double-layer of the SC after the ECD operation cycling was finished. (c) The SC voltage during the 100 cycles of ECD operations (50 times ON and 50 times OFF). (d) Zoom-in to the ECD ON and OFF cycling.

(a). quasi-sinusoidal voltage in symmetrical operation with respect to k = 2 and n = 2. b. Experimental results of quasi-sinusoidal voltage in symmetrical operation with respect to k = 2 and n = 2.

(a). quasi-sinusoidal voltage in Asymmetrical operation with respect to k = 2 and n = 2. (b). Experimental results quasi-sinusoidal voltage in symmetrical operation with respect to k = 2 and n = 2.

Degradation mechanism. a, Normalized luminance (L) and operation voltage at maximum η_A (V@ max η_A) vs. time for the ZnSe-QD and ZnS-QD devices operated at a constant current, and operation voltage vs. time of hole-only and electron-only ZnSe-QDs and ZnS-QDs based devices operated at a constant current. b Current efficiency (η_A) as a function of voltage for the ZnSe-QD and ZnS-QD devices measured before the lifetime test and after 20 h continuous operation. c Capacitance vs. voltage for the two devices measured before the lifetime test and after 20 h continuous operation

(a) Simplified schematic diagram of the supply-doubled pulse-shaping high voltage pulser, and (b) the operation of voltage doubling stage.

The dependence of the resistance on the width/amplitude of P/E pulses. The resistance gradually decreases with time by the width-adjusting program pulse operation (a) and gradually increases with voltage through the height-adjusting erase pulse operation (b).

Operation of reference voltage vector in sectors 3, 4, 5, and 6. (a) The reference voltage vector is in the undistorted region of sector 5. (b) The reference voltage vector is in the undistorted region of sector 3. (c) The reference voltage vector is in the distortion region I. (d) The reference voltage vector is in the undistorted region of sector 4. (e) The reference voltage vector is in the undistorted region of sector 6.

Neuromorphic operation. (a) Training operation. (b) Inference operation. During the training operation, the voltage that corresponds to the pattern to be memorized is applied to the bottom and top electrodes in the crossbar array. In (a), the bright purple at the cross points indicates that the electrical conductance increases, whereas the dark purple indicates that the electrical conductance is maintained. During the inference operation, the voltage that corresponds to the pattern slightly distorted from the memorized pattern is applied only to the bottom electrodes. Also in (b), the bright purple indicates that the electrical conductance increases, whereas the dark purple indicates that the electrical conductance is maintained. Consequently, some voltage is finally output after the transient behavior, which is a revised pattern.

Operating voltage and anode current a when ten consecutive read operations are applied after the erase operation and b when a read operation is applied at T_ST,1 = 10 s

Study of effects of CaCl₂-CNF film parameters on the output stability of SOP-TENG. (a–c) Study of the effect of moisture content on the output voltage of the SOP-TENG. (a) Voltage waveform of SOP-TENG with nonmoisture content. (b) Voltage waveform of SOP-TENG with low moisture content. (c) Voltage waveform of SOP-TENG with high moisture content. (d) Study of the effect of continuous operation on the output voltage of the SOP-TENG. The voltage data gained through the oscilloscope only dropped by 3.5% after continuous operation of 10 000 cycles, conforming superstable output performance of the SOP-TENG. (e) Study of the effect of device aging on the voltage output performance of the SOP-TENG. The measured voltage and the current response of a SOP-TENG after 120 days were 226 V and 5.18 μA, respectively, which only declined by about 5% and 3.3% compared with the initial value.

Cellular electrophysiological study of ion currents in RA after the Fontan operation. a The voltage dependence of I_to inactivation and activation in atrial cardiomyocytes of the indicated group. b The voltage dependence of I_K1 activation in atrial cardiomyocytes of the indicated group. c The voltage dependence of I_Ca,L inactivation and activation in atrial cardiomyocytes of the indicated group

Logic operation of the electric power: (a) experimental circuit for logic operation, (b) NAND operation by experimental circuit in (a), and (c) simulated switching pattern of NAND operation (input power, output power and voltage of capacitor in the circuit in (a)). The colour bar depicts the energy level at each time interval. The energy is normalized by the maximum value of the input energy. (d) Output power of possible logical operations of the power packets.

Operation voltage varies in terms of power flow.

Voltage, current, and field vs. time curves obtained during charging and persistent-mode operation at 5 K.

MPPT of a Benq GreenTriplex PM245P00 PV panel from stopped operation. Output voltage V_o = 60 V.

Performance comparison of subthreshold (blue circles) and superthreshold (orange squares) regimes. A) Voltage gain as a function of drain voltage while operating at subthreshold or peak voltage gain (at V _D = −0.6 V), by varying the load resistor (R _L). The subthreshold device maintains the same gain at much lower V _D. B) Voltage gain bandwidth shows similar results for both regions, however subthreshold operation consumes ≈370× less power.

Typical I-V curves and statistical distributions of Ti/HfO ₂ /Pt RRAM device under different operation. (a) Positive voltage sweep SET and negative voltage sweep RESET processes. (b) Positive current sweep SET and negative current sweep RESET processes. (c) Positive voltage sweep SET and negative current sweep RESET processes. (d) Positive current sweep SET and negative voltage sweep RESET processes. (e-h) The cumulative distributions of R _on and R _off in 200 continuous cycles tested by the operation modes in (a-d), respectively. (i-l) The Weibull plots of the distributions of R _on and R _off in correspondence with (e-h), respectively. The straight lines are the lines fitting to standard Weibull distribution.

The ripple waveforms of switch control signal, inductance current, and output voltage under each operation mode.