monolithic transistor - PMC

Anhan Liu, Xiaowei Zhang, Ziyu Liu, Yuning Li, Xueyang Peng, Xin Li, Yue Qin, Chen Hu, Yanqing Qiu, Han Jiang, Yang Wang, Yifan Li, Jun Tang, Jun Liu, Hao Guo, Tao Deng, Songang Peng, He Tian, Tian-Ling Ren

Nanomicro Lett. 2024 Dec; 16: 119. Published online 2024 Feb 16. doi: 10.1007/s40820-023-01273-5

PMCID:: PMC10873265

Abstract Article PDF–23M

Select item 66035904.

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Mladen Božanić, Saurabh Sinha

Sensors (Basel) 2019 Jun; 19(11): 2454. Published online 2019 May 29. doi: 10.3390/s19112454

PMCID:: PMC6603590

Abstract Article PDF–3.1M

Select item 96087025.

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

Jong Hyeok Oh, Yun Seop Yu

Micromachines (Basel) 2022 Oct; 13(10): 1625. Published online 2022 Sep 28. doi: 10.3390/mi13101625

PMCID:: PMC9608702

Abstract Article PDF–2.0M

Select item 106000016.

A microfluidic transistor for automatic control of liquids

Kaustav A. Gopinathan, Avanish Mishra, Baris R. Mutlu, Jon F. Edd, Mehmet Toner

Nature. 2023; 622(7984): 735–741. Published online 2023 Oct 25. doi: 10.1038/s41586-023-06517-3

PMCID:: PMC10600001

Abstract Article PDF–7.6M

Select item 63850337.

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor

Yafei Fu, Jie Sun, Zaifa Du, Weiling Guo, Chunli Yan, Fangzhu Xiong, Le Wang, Yibo Dong, Chen Xu, Jun Deng, Tailiang Guo, Qun Yan

Materials (Basel) 2019 Feb; 12(3): 428. Published online 2019 Jan 30. doi: 10.3390/ma12030428

PMCID:: PMC6385033

Abstract Article PDF–2.1M

Select item 68583598.

All WSe₂ 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean

Nat Commun. 2019; 10: 5201. Published online 2019 Nov 15. doi: 10.1038/s41467-019-13176-4

PMCID:: PMC6858359

Abstract Article PDF–1.2M

Select item 106201829.

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

Lei Han, Simon Ogier, Jun Li, Dan Sharkey, Xiaokuan Yin, Andrew Baker, Alejandro Carreras, Fangyuan Chang, Kai Cheng, Xiaojun Guo

Nat Commun. 2023; 14: 6985. Published online 2023 Nov 1. doi: 10.1038/s41467-023-42443-8

PMCID:: PMC10620182

Abstract Article PDF–1.3M

Select item 1096080410.

A detachable interface for stable low-voltage stretchable transistor arrays and high-resolution X-ray imaging

Yangshuang Bian, Mingliang Zhu, Chengyu Wang, Kai Liu, Wenkang Shi, Zhiheng Zhu, Mingcong Qin, Fan Zhang, Zhiyuan Zhao, Hanlin Wang, Yunqi Liu, Yunlong Guo

Nat Commun. 2024; 15: 2624. Published online 2024 Mar 23. doi: 10.1038/s41467-024-47026-9

PMCID:: PMC10960804

Abstract Article PDF–1.8M

Select item 1098507711.

Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale

Seung-Han Kang, Jeong-Wan Jo, Jong Min Lee, Sanghee Moon, Seung Bum Shin, Su Bin Choi, Donghwan Byeon, Jaehyun Kim, Myung-Gil Kim, Yong-Hoon Kim, Jong-Woong Kim, Sung Kyu Park

Nat Commun. 2024; 15: 2814. Published online 2024 Apr 1. doi: 10.1038/s41467-024-47184-w

PMCID:: PMC10985077

Abstract Article PDF–5.1M

Select item 1060944212.

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

Jong Hyeok Oh, Yun Seop Yu

Micromachines (Basel) 2023 Oct; 14(10): 1822. Published online 2023 Sep 23. doi: 10.3390/mi14101822

PMCID:: PMC10609442

Abstract Article PDF–1.9M

Select item 631831413.

Three-dimensional monolithic integration in flexible printed organic transistors

Jimin Kwon, Yasunori Takeda, Rei Shiwaku, Shizuo Tokito, Kilwon Cho, Sungjune Jung

Nat Commun. 2019; 10: 54. Published online 2019 Jan 3. doi: 10.1038/s41467-018-07904-5

PMCID:: PMC6318314

Abstract Article PDF–1.9M

Select item 1053927814.

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Wenhui Wang, Ke Li, Jun Lan, Mei Shen, Zhongrui Wang, Xuewei Feng, Hongyu Yu, Kai Chen, Jiamin Li, Feichi Zhou, Longyang Lin, Panpan Zhang, Yida Li

Nat Commun. 2023; 14: 6079. Published online 2023 Sep 28. doi: 10.1038/s41467-023-41868-5

PMCID:: PMC10539278

Abstract Article PDF–2.1M

Select item 893052615.

Materials and Interface Designs of Waterproof Field-Effect Transistor Arrays for Detection of Neurological Biomarkers

Yan Dong, Shulin Chen, Tzu-Li Liu, Jinghua Li

Small. Author manuscript; available in PMC 2023 Mar 1.

Published in final edited form as: Small. 2022 Mar; 18(11): e2106866. Published online 2022 Jan 13. doi: 10.1002/smll.202106866

PMCID:: PMC8930526

Abstract Article PDF–3.1M

Select item 681479016.

A vertical silicon-graphene-germanium transistor

Chi Liu, Wei Ma, Maolin Chen, Wencai Ren, Dongming Sun

Nat Commun. 2019; 10: 4873. Published online 2019 Oct 25. doi: 10.1038/s41467-019-12814-1

PMCID:: PMC6814790

Abstract Article PDF–931K

Select item 1060257717.

3D Neuromorphic Hardware with Single Thin‐Film Transistor Synapses Over Single Thin‐Body Transistor Neurons by Monolithic Vertical Integration

Joon‐Kyu Han, Jung‐Woo Lee, Yeeun Kim, Young Bin Kim, Seong‐Yun Yun, Sang‐Won Lee, Ji‐Man Yu, Keon Jae Lee, Hyun Myung, Yang‐Kyu Choi

Adv Sci (Weinh) 2023 Oct; 10(30): 2302380. Published online 2023 Sep 15. doi: 10.1002/advs.202302380

PMCID:: PMC10602577

Abstract Article PDF–3.2M

Select item 858780618.

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

Lidong Huang, Qiuyan Miao, Xiruo Su, Bin Wu, Kaichen Song

Sensors (Basel) 2021 Nov; 21(21): 7102. Published online 2021 Oct 26. doi: 10.3390/s21217102

PMCID:: PMC8587806

Abstract Article PDF–887K

Select item 1112395019.

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang

Nanomaterials (Basel) 2024 May; 14(10): 837. Published online 2024 May 9. doi: 10.3390/nano14100837

PMCID:: PMC11123950

Abstract Article PDF–16M

Select item 952997720.

Two dimensional semiconducting materials for ultimately scaled transistors

Tianyao Wei, Zichao Han, Xinyi Zhong, Qingyu Xiao, Tao Liu, Du Xiang

iScience. 2022 Oct 21; 25(10): 105160. Published online 2022 Sep 20. doi: 10.1016/j.isci.2022.105160

PMCID:: PMC9529977

Abstract Article PDF–5.8M

<< First< Prev

Page of 93

Next >Last >>

Supplemental Content

Filter your results:

Manage Filters

PMC Images search for monolithic transistor

Figure 1

Schematic of a monolithic extended-gate field-effect transistor in which the sensitive interface is placed far from the metal–oxide semiconductor field-effect transistor (MOSFET).

Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing

Sensors (Basel). 2019 Mar;19(5):1063.
Fig. 9

The resistor feedback TIA (left bottom) and the full transistor implementation (right). Transistor dimensions are given in μm’s. Parasitic interconnect capacitance (C_PAR) limits the gain of the receiver and increases noise. Monolithic integration improves performance by minimizing C_PAR.

Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

IEEE Trans Ultrason Ferroelectr Freq Control. ;58(8):1658-1668.
Figure 1

Schematic diagram of the monolithic integrated micro-light-emitting diodes (micro-LED)/graphene field-effect driving transistors (GFET) device. Some semiconductor layers are omitted for simplicity. The inset is its equivalent circuit, where the micro-LED is connected in series with the driving transistor (AM). The red arrow indicates the direction of the current flow. This figure is not drawn to scale. GaN, V_DD, G, D, S and MQW denote gallium nitride, total applied voltage of the integrated device, gate, drain, source and multiple quantum well, respectively.

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor

Materials (Basel). 2019 Feb;12(3):428.
Fig. 18.

(A) Schematic of the fabrication steps, (B) optical microscope image, and (C) luminous picture of micro-LED display with the drive transistor fabricated on Si substrate []. (D) Cross-sectional schematic and (E) top-view microscope image of the monolithic integration of micro-LED and silicon TFT []. (F) Cross-sectional schematic of monolithic integration of micro-LED and MoS₂ TFT. SEM images of (G) the integrated micro-LED array and (H) pixel [].

Integration Technology of Micro-LED for Next-Generation Display

Research (Wash D C). 2023;6:0047.