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Table representation of search results timeline featuring number of search results per year.

Year Number of Results
1987 1
1988 1
1989 2
1990 1
1991 2
1992 2
1993 6
1994 1
1998 1
1999 1
2000 2
2001 1
2002 4
2003 7
2004 6
2005 8
2006 14
2007 8
2008 10
2009 16
2010 20
2011 12
2012 28
2013 21
2014 24
2015 26
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2020 56
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2023 58
2024 14

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617 results

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Page 1
High Temperature Ultrasonic Transducers: A Review.
Kazys R, Vaskeliene V. Kazys R, et al. Sensors (Basel). 2021 May 5;21(9):3200. doi: 10.3390/s21093200. Sensors (Basel). 2021. PMID: 34062979 Free PMC article. Review.
The piezoelectric materials suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orthophosphate, bismuth titanate, oxyborate crystals, lead metaniobate, and other piezoceramics are analyzed. ...
The piezoelectric materials suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orth …
Aluminum Nitride Out-of-Plane Piezoelectric MEMS Actuators.
Rabih AAS, Kazemi M, Ménard M, Nabki F. Rabih AAS, et al. Micromachines (Basel). 2023 Mar 22;14(3):700. doi: 10.3390/mi14030700. Micromachines (Basel). 2023. PMID: 36985106 Free PMC article.
Furthermore, piezoelectric actuators can provide displacements in two opposite directions. This study presents a novel aluminum nitride-based out-of-plane piezoelectric MEMS actuator equipped with a capacitive sensing mechanism to track its displacement. ...
Furthermore, piezoelectric actuators can provide displacements in two opposite directions. This study presents a novel aluminum ni
Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics.
Abels C, Mastronardi VM, Guido F, Dattoma T, Qualtieri A, Megill WM, De Vittorio M, Rizzi F. Abels C, et al. Sensors (Basel). 2017 May 10;17(5):1080. doi: 10.3390/s17051080. Sensors (Basel). 2017. PMID: 28489040 Free PMC article. Review.
We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. ...Piezoresistive properties of nichrome strain gauges and direct piezo …
We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the micro …
The Advanced Aluminum Nitride Synthesis Methods and Its Applications: Patent Review.
Shishkin RA, Elagin AA, Mayorova ES, Beketov AR. Shishkin RA, et al. Recent Pat Nanotechnol. 2016;10(2):146-56. doi: 10.2174/1872210510999160414150634. Recent Pat Nanotechnol. 2016. PMID: 27502391 Review.
BACKGROUND: High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. ...METHODS: The patent search on "aluminum nitride synthesis" has been carried out. The research activity has been analyzed. ...
BACKGROUND: High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. ...METHODS: The …
Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates.
Desideri D, Bernardo E, Corso AJ, Moro F, Pelizzo MG. Desideri D, et al. Materials (Basel). 2022 Mar 11;15(6):2090. doi: 10.3390/ma15062090. Materials (Basel). 2022. PMID: 35329541 Free PMC article.
The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 C. ...Two values (0.4 and 0.8) of nitrogen concentration were us …
The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development …
Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review.
Iqbal A, Mohd-Yasin F. Iqbal A, et al. Sensors (Basel). 2018 Jun 2;18(6):1797. doi: 10.3390/s18061797. Sensors (Basel). 2018. PMID: 29865261 Free PMC article. Review.
We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on va …
We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) film …
Aluminum nitride integration on silicon nitride photonic circuits: a hybrid approach towards on-chip nonlinear optics.
Terrasanta G, Sommer T, Müller M, Althammer M, Gross R, Poot M. Terrasanta G, et al. Opt Express. 2022 Mar 14;30(6):8537-8549. doi: 10.1364/OE.445465. Opt Express. 2022. PMID: 35299305 Free article.
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large chi((2)) nonlinearity. ...
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large chi((2)) nonlinearity. ...
Self-Rolled-Up Aluminum Nitride-Based 3D Architectures Enabled by Record-High Differential Stress.
Khandelwal A, Ren Z, Namiki S, Yang Z, Choudhary N, Li C, Wang P, Mi Z, Li X. Khandelwal A, et al. ACS Appl Mater Interfaces. 2022 Jun 29;14(25):29014-29024. doi: 10.1021/acsami.2c06637. Epub 2022 Jun 14. ACS Appl Mater Interfaces. 2022. PMID: 35700345
Aluminum nitride (AlN) continues to kindle considerable interest in various microelectromechanical system (MEMS)-related fields because of its superior optical, mechanical, thermal, and piezoelectric properties. ...
Aluminum nitride (AlN) continues to kindle considerable interest in various microelectromechanical system (MEMS)-related field
Al0.78Sc0.22N Lamb Wave Contour Mode Resonators.
Luo Z, Shao S, Wu T. Luo Z, et al. IEEE Trans Ultrason Ferroelectr Freq Control. 2022 Nov;69(11):3108-3116. doi: 10.1109/TUFFC.2021.3136337. Epub 2022 Nov 2. IEEE Trans Ultrason Ferroelectr Freq Control. 2022. PMID: 34914586
This article also presents the co-sputtering characteristics of the AlScN thin films under [Formula: see text] gas to achieve low-stress and high-quality piezoelectric materials, and the etching optimization of high concentration Sc doping aluminum nitride (AlN) thi …
This article also presents the co-sputtering characteristics of the AlScN thin films under [Formula: see text] gas to achieve low-stress and …
617 results