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Items: 12

1.

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

González D, Braza V, Utrilla AD, Gonzalo A, Reyes DF, Ben T, Guzman A, Hierro A, Ulloa JM.

Nanotechnology. 2017 Oct 20;28(42):425702. doi: 10.1088/1361-6528/aa83e2. Epub 2017 Aug 3.

PMID:
28770809
2.

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

Gonzalo A, Utrilla AD, Reyes DF, Braza V, Llorens JM, Fuertes Marrón D, Alén B, Ben T, González D, Guzman A, Hierro A, Ulloa JM.

Sci Rep. 2017 Jun 21;7(1):4012. doi: 10.1038/s41598-017-04321-4.

3.

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications.

Braza V, Reyes DF, Gonzalo A, Utrilla AD, Ben T, Ulloa JM, González D.

Nanoscale Res Lett. 2017 Dec;12(1):356. doi: 10.1186/s11671-017-2129-2. Epub 2017 May 18.

4.

General route for the decomposition of InAs quantum dots during the capping process.

González D, Reyes DF, Utrilla AD, Ben T, Braza V, Guzman A, Hierro A, Ulloa JM.

Nanotechnology. 2016 Mar 29;27(12):125703. doi: 10.1088/0957-4484/27/12/125703. Epub 2016 Feb 18.

PMID:
26891164
5.

Strain mapping accuracy improvement using super-resolution techniques.

Bárcena-González G, Guerrero-Lebrero MP, Guerrero E, Fernández-Reyes D, González D, Mayoral A, Utrilla AD, Ulloa JM, Galindo PL.

J Microsc. 2016 Apr;262(1):50-8. doi: 10.1111/jmi.12341. Epub 2015 Oct 26.

PMID:
26501744
6.

Photoexcited-induced sensitivity of InGaAs surface QDs to environment.

Milla MJ, Ulloa JM, Guzmán A.

Nanotechnology. 2014 Nov 7;25(44):445501. doi: 10.1088/0957-4484/25/44/445501. Epub 2014 Oct 17.

PMID:
25325146
7.

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

Lopez-Ponce M, Nakamura A, Suzuki M, Temmyo J, Agouram S, Martínez-Tomás MC, Muñoz-Sanjosé V, Lefebvre P, Ulloa JM, Muñoz E, Hierro A.

Nanotechnology. 2014 Jun 27;25(25):255202. doi: 10.1088/0957-4484/25/25/255202. Epub 2014 Jun 4.

PMID:
24897432
8.

Strong influence of the humidity on the electrical properties of InGaAs surface quantum dots.

Milla MJ, Ulloa JM, Guzmán Á.

ACS Appl Mater Interfaces. 2014 May 14;6(9):6191-5. doi: 10.1021/am5010442. Epub 2014 Apr 28.

PMID:
24764178
9.

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer.

Utrilla AD, Ulloa JM, Guzman A, Hierro A.

Nanoscale Res Lett. 2014 Jan 17;9(1):36. doi: 10.1186/1556-276X-9-36.

10.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.

Reyes DF, González D, Ulloa JM, Sales DL, Dominguez L, Mayoral A, Hierro A.

Nanoscale Res Lett. 2012 Nov 27;7(1):653. doi: 10.1186/1556-276X-7-653.

11.

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires.

Ulloa JM, Koenraad PM, Fuster D, González L, González Y, González MU.

Nanotechnology. 2008 Nov 5;19(44):445601. doi: 10.1088/0957-4484/19/44/445601. Epub 2008 Sep 29.

PMID:
21832733
12.

Monitoring dynamic protein expression in living E. coli. Bacterial cells by laser tweezers Raman spectroscopy.

Chan JW, Winhold H, Corzett MH, Ulloa JM, Cosman M, Balhorn R, Huser T.

Cytometry A. 2007 Jul;71(7):468-74.

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