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Items: 5


Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates.

Lin YC, Lo I, Shih HC, Chou MMC, Schaadt DM.

Scanning. 2017 Oct 18;2017:2362084. doi: 10.1155/2017/2362084. eCollection 2017.


Influence of hole shape/size on the growth of site-selective quantum dots.

Mayer CJ, Helfrich MF, Schaadt DM.

Nanoscale Res Lett. 2013 Dec 1;8(1):504. doi: 10.1186/1556-276X-8-504.


Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM.

Nanoscale Res Lett. 2011 Jun 15;6(1):425. doi: 10.1186/1556-276X-6-425.


Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

Helfrich M, Gröger R, Förste A, Litvinov D, Gerthsen D, Schimmel T, Schaadt DM.

Nanoscale Res Lett. 2011 Mar 11;6(1):211. doi: 10.1186/1556-276X-6-211.


Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

Hu D, McPheeters CC, Yu ET, Schaadt DM.

Nanoscale Res Lett. 2011 Jan 12;6(1):83. doi: 10.1186/1556-276X-6-83.

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