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Items: 8

1.

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates.

Lin YC, Lo I, Shih HC, Chou MMC, Schaadt DM.

Scanning. 2017 Oct 18;2017:2362084. doi: 10.1155/2017/2362084. eCollection 2017.

2.

Influence of hole shape/size on the growth of site-selective quantum dots.

Mayer CJ, Helfrich MF, Schaadt DM.

Nanoscale Res Lett. 2013 Dec 1;8(1):504. doi: 10.1186/1556-276X-8-504.

3.

Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images.

Mehrtens T, Müller K, Schowalter M, Hu D, Schaadt DM, Rosenauer A.

Ultramicroscopy. 2013 Aug;131:1-9. doi: 10.1016/j.ultramic.2013.03.018. Epub 2013 Apr 6.

PMID:
23666109
4.

A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines.

Slobodskyy T, Schroth P, Grigoriev D, Minkevich AA, Hu DZ, Schaadt DM, Baumbach T.

Rev Sci Instrum. 2012 Oct;83(10):105112. doi: 10.1063/1.4759495.

PMID:
23126809
5.

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM.

Nanoscale Res Lett. 2011 Jun 15;6(1):425. doi: 10.1186/1556-276X-6-425.

6.

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

Helfrich M, Gröger R, Förste A, Litvinov D, Gerthsen D, Schimmel T, Schaadt DM.

Nanoscale Res Lett. 2011 Mar 11;6(1):211. doi: 10.1186/1556-276X-6-211.

7.

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

Hu D, McPheeters CC, Yu ET, Schaadt DM.

Nanoscale Res Lett. 2011 Jan 12;6(1):83. doi: 10.1186/1556-276X-6-83.

8.

Quantification of sample thickness and in-concentration of InGaAs quantum wells by transmission measurements in a scanning electron microscope.

Volkenandt T, Müller E, Hu DZ, Schaadt DM, Gerthsen D.

Microsc Microanal. 2010 Oct;16(5):604-13. doi: 10.1017/S1431927610000292. Epub 2010 Jul 16.

PMID:
20633317

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