Format
Sort by
Items per page

Send to

Choose Destination

Search results

Items: 10

1.

Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells.

Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC.

ACS Appl Mater Interfaces. 2017 May 24;9(20):17024-17033. doi: 10.1021/acsami.7b01838. Epub 2017 May 9.

PMID:
28452464
2.

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110).

Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC.

J Chem Phys. 2017 Feb 7;146(5):052820. doi: 10.1063/1.4975081.

PMID:
28178835
3.

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.

Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC.

ACS Nano. 2016 Jul 26;10(7):6888-96. doi: 10.1021/acsnano.6b02648. Epub 2016 Jun 29.

PMID:
27305595
4.

Grazing Incidence Cross-Sectioning of Thin-Film Solar Cells via Cryogenic Focused Ion Beam: A Case Study on CIGSe.

Sardashti K, Haight R, Anderson R, Contreras M, Fruhberger B, Kummel AC.

ACS Appl Mater Interfaces. 2016 Jun 22;8(24):14994-9. doi: 10.1021/acsami.6b04214. Epub 2016 Jun 8.

PMID:
27248803
5.

Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics.

Chagarov E, Sardashti K, Kummel AC, Lee YS, Haight R, Gershon TS.

J Chem Phys. 2016 Mar 14;144(10):104704. doi: 10.1063/1.4943270.

PMID:
26979701
6.

Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces.

Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A.

ACS Appl Mater Interfaces. 2015 Dec 2;7(47):26275-83. doi: 10.1021/acsami.5b08727. Epub 2015 Nov 17.

PMID:
26575590
7.

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces.

Park JH, Movva HC, Chagarov E, Sardashti K, Chou H, Kwak I, Hu KT, Fullerton-Shirey SK, Choudhury P, Banerjee SK, Kummel AC.

Nano Lett. 2015 Oct 14;15(10):6626-33. doi: 10.1021/acs.nanolett.5b02429. Epub 2015 Sep 28.

PMID:
26393281
8.

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer.

Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A.

J Am Chem Soc. 2015 Jul 8;137(26):8526-33. doi: 10.1021/jacs.5b03660. Epub 2015 Jun 23.

PMID:
26070022
9.

Kinetic study of H-terminated silicon nanowires oxidation in very first stages.

Bashouti MY, Sardashti K, Ristein J, Christiansen S.

Nanoscale Res Lett. 2013 Jan 21;8(1):41. doi: 10.1186/1556-276X-8-41.

10.

Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy.

Bashouti MY, Sardashti K, Ristein J, Christiansen SH.

Phys Chem Chem Phys. 2012 Sep 14;14(34):11877-81. doi: 10.1039/c2cp41709j. Epub 2012 Jul 26.

PMID:
22837043

Supplemental Content

Loading ...
Support Center