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Items: 4

1.

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures.

Dönmez O, Sarcan F, Erol A, Gunes M, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2014 Mar 24;9(1):141. doi: 10.1186/1556-276X-9-141.

2.

Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys.

Sarcan F, Dönmez O, Kara K, Erol A, Akalın E, Cetin Arıkan M, Makhloufi H, Arnoult A, Fontaine C.

Nanoscale Res Lett. 2014 Mar 14;9(1):119. doi: 10.1186/1556-276X-9-119.

3.

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures.

Erol A, Akalin E, Sarcan F, Donmez O, Akyuz S, Arikan CM, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Nov 28;7(1):656. doi: 10.1186/1556-276X-7-656.

4.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

Sarcan F, Donmez O, Gunes M, Erol A, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Sep 25;7(1):529. doi: 10.1186/1556-276X-7-529.

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