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Items: 6


Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach.

Carta D, Salaoru I, Khiat A, Regoutz A, Mitterbauer C, Harrison NM, Prodromakis T.

ACS Appl Mater Interfaces. 2016 Aug 3;8(30):19605-11. doi: 10.1021/acsami.6b04919.


Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells.

Cherrington R, Wood BM, Salaoru I, Goodship V.

J Vis Exp. 2016 May 4;(111). doi: 10.3791/53963.


Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.

Salaoru I, Li Q, Khiat A, Prodromakis T.

Nanoscale Res Lett. 2014 Oct 4;9(1):552. doi: 10.1186/1556-276X-9-552.


Stochastic switching of TiO2-based memristive devices with identical initial memory states.

Li Q, Khiat A, Salaoru I, Xu H, Prodromakis T.

Nanoscale Res Lett. 2014 Jun 10;9(1):293. doi: 10.1186/1556-276X-9-293.


Memory impedance in TiO2 based metal-insulator-metal devices.

Qingjiang L, Khiat A, Salaoru I, Papavassiliou C, Hui X, Prodromakis T.

Sci Rep. 2014 Mar 31;4:4522. doi: 10.1038/srep04522.


Electrical bistability in a composite of polymer and barium titanate nanoparticles.

Salaoru I, Paul S.

Philos Trans A Math Phys Eng Sci. 2009 Oct 28;367(1905):4227-34. doi: 10.1098/rsta.2009.0167.

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