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Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE.

Nikiforov AI, Timofeev VA, Teys SA, Gutakovsky AK, Pchelyakov OP.

Nanoscale Res Lett. 2012 Oct 9;7(1):561. doi: 10.1186/1556-276X-7-561.


Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy.

Mashanov V, Ulyanov V, Timofeev V, Nikiforov A, Pchelyakov O, Yu IS, Cheng H.

Nanoscale Res Lett. 2011 Jan 12;6(1):85. doi: 10.1186/1556-276X-6-85.

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