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Nanoscale Res Lett. 2012 Jan 25;7(1):87. doi: 10.1186/1556-276X-7-87.

The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate.

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1
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China. lwang@iphy.ac.cn.

Abstract

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.76ev. The low-energy peak blueshifted with increasing excitation power is identified as the indirect transition from the InGaAs conduction band to the GaSb hole level (type-II), and the high-energy peak is identified as the direct transition (type-I) of GaSb QDs. This material system shows a promising application on quantum-dot infrared detectors and quantum-dot field-effect transistor.

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