Send to

Choose Destination
See comment in PubMed Commons below
Nanoscale Res Lett. 2012 Nov 20;7(1):631. doi: 10.1186/1556-276X-7-631.

Dilute nitride and GaAs n-i-p-i solar cells.

Author information

  • 1School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK.


We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circular mesa cells. As means of characterisation, spectral response and illuminated current-voltage (I-V) were measured on the samples. The spectral response suggests that all horizontal layers are able to contribute to the photocurrent. Performance of the devices is discussed with interest in the n-i-p-i structure as a possible design for the GaInP/GaAs/GaInNAs tandem solar cell.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for Springer Icon for PubMed Central
    Loading ...
    Write to the Help Desk