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Items: 13

1.

Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors.

Boyer-Richard S, Katan C, Traoré B, Scholz R, Jancu JM, Even J.

J Phys Chem Lett. 2016 Oct 6;7(19):3833-3840.

PMID:
27623678
2.

Intrinsic interface states in InAs-AlSb heterostructures.

Raouafi F, Benchamekh R, Nestoklon MO, Jancu JM, Voisin P.

J Phys Condens Matter. 2016 Feb 3;28(4):045001. doi: 10.1088/0953-8984/28/4/045001.

PMID:
26732184
3.

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

Robert C, Thanh TN, Cornet C, Turban P, Perrin M, Balocchi A, Folliot H, Bertru N, Pedesseau L, Nestoklon MO, Even J, Jancu JM, Tricot S, Durand O, Marie X, Le Corre A.

Nanoscale Res Lett. 2012 Nov 23;7(1):643. doi: 10.1186/1556-276X-7-643.

4.

Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices.

Boyer-Richard S, Robert C, Gérard L, Richters JP, André R, Bleuse J, Mariette H, Even J, Jancu JM.

Nanoscale Res Lett. 2012 Oct 2;7(1):543. doi: 10.1186/1556-276X-7-543.

5.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316
6.

STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states.

Jancu JM, Girard JC, Nestoklon MO, Lemaître A, Glas F, Wang ZZ, Voisin P.

Phys Rev Lett. 2008 Nov 7;101(19):196801.

PMID:
19113292
7.

Comment on "Spin-induced forbidden evanescent states in III-V semiconductors".

Nguyen-Quang T, Jancu JM, Voisin P.

Phys Rev Lett. 2006 Sep 8;97(10):109701; discussion 109702. No abstract available.

PMID:
17025861
8.

Reply to "Comment on 'Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems' "

Jancu JM, Bertho D, Jouanin C, Gil B.

Phys Rev B Condens Matter. 1995 Mar 15;51(12):7929-7930. No abstract available.

PMID:
9977390
9.

[001] strain-induced band mixing in zinc-blende semiconductors: Intravalence versus upper-conduction-valence band effects.

Bertho D, Jancu JM, Jouanin C.

Phys Rev B Condens Matter. 1994 Dec 15;50(23):16956-16963. No abstract available.

PMID:
9976091
10.

Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems.

Jancu JM, Bertho D, Jouanin C, Gil B, Pelekanos N, Magnea N, Mariette H.

Phys Rev B Condens Matter. 1994 Apr 15;49(15):10802-10805. No abstract available.

PMID:
10009921
11.

Equations of state and a tight-binding model for strained layers: Application to a ZnSe-GaAs epilayer.

Bertho D, Jancu JM, Jouanin C.

Phys Rev B Condens Matter. 1993 Jul 15;48(4):2452-2459. No abstract available.

PMID:
10008637
12.

Optical transitions involving unconfined energy states in superlattices.

Jouanin C, Jancu JM, Bertho D, Boring P, Gil B.

Phys Rev B Condens Matter. 1992 Aug 15;46(8):4988-4991. No abstract available.

PMID:
10004265
13.

Uniaxial-stress determination of the symmetry of excitons associated with the miniband dispersion in (Ga,In)As-GaAs superlattices.

Boring P, Jancu JM, Gil B, Bertho D, Jouanin C, Moore KJ.

Phys Rev B Condens Matter. 1992 Aug 15;46(8):4764-4768. No abstract available.

PMID:
10004236

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