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Items: 1 to 20 of 56

1.
2.

Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots.

Noor-Ul-Ain, Eriksson MO, Schmidt S, Asghar M, Lin PC, Holtz PO, Syväjärvi M, Yazdi GR.

Nanomaterials (Basel). 2016 Nov 3;6(11). pii: E198. doi: 10.3390/nano6110198.

3.

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid.

Jemsson T, Machhadani H, Holtz PO, Karlsson KF.

Nanotechnology. 2015 Feb 13;26(6):065702. doi: 10.1088/0957-4484/26/6/065702. Epub 2015 Jan 19.

PMID:
25597532
4.

Excitons and biexcitons in InGaN quantum dot like localization centers.

Amloy S, Karlsson KF, Eriksson MO, Palisaitis J, Persson PO, Chen YT, Chen KH, Hsu HC, Hsiao CL, Chen LC, Holtz PO.

Nanotechnology. 2014 Dec 12;25(49):495702. doi: 10.1088/0957-4484/25/49/495702. Epub 2014 Nov 20.

PMID:
25410551
5.

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.

Lundskog A, Palisaitis J, Hsu CW, Eriksson M, Karlsson KF, Hultman L, Persson PO, Forsberg U, Holtz PO, Janzén E.

Nanotechnology. 2012 Aug 3;23(30):305708. doi: 10.1088/0957-4484/23/30/305708. Epub 2012 Jul 11.

PMID:
22781961
6.

Symmetries and the polarized optical spectra of exciton complexes in quantum dots.

Dupertuis MA, Karlsson KF, Oberli DY, Pelucchi E, Rudra A, Holtz PO, Kapon E.

Phys Rev Lett. 2011 Sep 16;107(12):127403. Epub 2011 Sep 16.

PMID:
22026800
7.

Single excitons in InGaN quantum dots on GaN pyramid arrays.

Hsu CW, Lundskog A, Karlsson KF, Forsberg U, Janzén E, Holtz PO.

Nano Lett. 2011 Jun 8;11(6):2415-8. doi: 10.1021/nl200810v. Epub 2011 Apr 28.

PMID:
21526837
8.

Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area.

Moskalenko E, Larsson A, Holtz PO.

Nanotechnology. 2010 Aug 27;21(34):345401. doi: 10.1088/0957-4484/21/34/345401. Epub 2010 Jul 30.

PMID:
20671363
9.

Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.

Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM.

Nano Lett. 2009 Jan;9(1):353-9. doi: 10.1021/nl803148q.

PMID:
19072126
10.

Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content.

Gholami M, Haratizadeh H, Esmaeili M, Amiri R, Holtz PO, Hammar M.

Nanotechnology. 2008 Aug 6;19(31):315705. doi: 10.1088/0957-4484/19/31/315705. Epub 2008 Jun 24.

PMID:
21828797
11.

Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.

Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM.

Nano Lett. 2007 Jan;7(1):188-93.

PMID:
17212462
12.

Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots.

Moskalenko ES, Karlsson FK, Donchev VT, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM.

Nano Lett. 2005 Nov;5(11):2117-22.

PMID:
16277437
13.

Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells.

Ferreira AC, Holtz PO, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1996 Dec 15;54(23):16994-16997. No abstract available.

PMID:
9985830
14.

Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.

Ferreira AC, Holtz PO, Sernelius BE, Buyanova I I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1996 Dec 15;54(23):16989-16993. No abstract available.

PMID:
9985829
15.

Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctions.

Lundström T, Dalfors J, Holtz PO, Zhao QX, Monemar B, Landgren G, Wallin J.

Phys Rev B Condens Matter. 1996 Oct 15;54(15):10637-10643. No abstract available.

PMID:
9984860
16.

Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.

Buyanov AV, Ferreira AC, Söderström E, Buyanova IA, Holtz PO, Sernelius B, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1996 Jan 15;53(3):1357-1361. No abstract available.

PMID:
9983595
17.

Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures.

Godlewski M, Lundström T, Zhao QX, Chen WM, Holtz PO, Monemar B, Anderson TG.

Phys Rev B Condens Matter. 1995 Nov 15;52(20):14688-14692. No abstract available.

PMID:
9980804
18.

Resonant coupling of electrons and excitons in an aperiodic superlattice under electric fields studied by photoluminescence spectroscopy.

Cao SM, Willander M, Toropov AA, Shubina TV, Mel'tser BY, Shaposhnikov SV, Kop'ev PS, Holtz PO, Bergman JP, Monemar B.

Phys Rev B Condens Matter. 1995 Jun 15;51(23):17267-17270. No abstract available.

PMID:
9978753
19.

Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well"

Holtz PO, Zhao QX, Harris CI, Bergman JP, Lundström T, Monemar B.

Phys Rev Lett. 1995 May 22;74(21):4355. No abstract available.

PMID:
10058481
20.

Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells.

Harris CI, Monemar B, Kalt H, Holtz PO, Sundaram M, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1995 May 15;51(19):13221-13225. No abstract available.

PMID:
9978121

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