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Items: 1 to 20 of 52

1.

Thulium doped LuAG ceramics for passively mode locked lasers.

Wang Y, Lan R, Mateos X, Li J, Li C, Suomalainen S, Härkönen A, Guina M, Petrov V, Griebner U.

Opt Express. 2017 Mar 20;25(6):7084-7091. doi: 10.1364/OE.25.007084.

PMID:
28381048
2.

33 W continuous output power semiconductor disk laser emitting at 1275 nm.

Leinonen T, Iakovlev V, Sirbu A, Kapon E, Guina M.

Opt Express. 2017 Mar 20;25(6):7008-7013. doi: 10.1364/OE.25.007008.

PMID:
28381042
3.

Structural Investigation of Uniform Ensembles of Self-Catalyzed GaAs Nanowires Fabricated by a Lithography-Free Technique.

Koivusalo E, Hakkarainen T, Guina M.

Nanoscale Res Lett. 2017 Dec;12(1):192. doi: 10.1186/s11671-017-1989-9. Epub 2017 Mar 16.

4.

Diode-pumped mode-locked Tm:LuAG laser at 2  μm based on GaSb-SESAM.

Luan C, Yang K, Zhao J, Zhao S, Li T, Zhang H, He J, Song L, Dekorsy T, Guina M, Zheng L.

Opt Lett. 2017 Feb 15;42(4):839-842. doi: 10.1364/OL.42.000839.

PMID:
28198878
5.

Frequency-doubled passively Q-switched microchip laser producing 225  ps pulses at 671  nm.

Nikkinen J, Korpijärvi VM, Leino I, Härkönen A, Guina M.

Opt Lett. 2016 Nov 15;41(22):5385-5388. doi: 10.1364/OL.41.005385.

PMID:
27842138
6.

Broadly tunable mode-locked Ho:YAG ceramic laser around 2.1 µm.

Wang Y, Lan R, Mateos X, Li J, Hu C, Li C, Suomalainen S, Härkönen A, Guina M, Petrov V, Griebner U.

Opt Express. 2016 Aug 8;24(16):18003-12. doi: 10.1364/OE.24.018003.

PMID:
27505767
7.

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells.

Luna E, Wu M, Hanke M, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2016 Aug 12;27(32):325603. doi: 10.1088/0957-4484/27/32/325603. Epub 2016 Jul 1.

PMID:
27364086
8.

High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180  nm.

Korpijärvi VM, Viheriälä J, Koskinen M, Aho AT, Guina M.

Opt Lett. 2016 Feb 15;41(4):657-60. doi: 10.1364/OL.41.000657.

PMID:
26872156
9.

Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers.

Wu M, Hanke M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2015 Oct 23;26(42):425701. doi: 10.1088/0957-4484/26/42/425701. Epub 2015 Sep 30.

PMID:
26421507
10.

615 nm GaInNAs VECSEL with output power above 10 W.

Kantola E, Leinonen T, Penttinen JP, Korpijärvi VM, Guina M.

Opt Express. 2015 Aug 10;23(16):20280-7. doi: 10.1364/OE.23.020280.

PMID:
26367883
11.

Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111).

Hakkarainen TV, Schramm A, Mäkelä J, Laukkanen P, Guina M.

Nanotechnology. 2015 Jul 10;26(27):275301.

PMID:
26087248
12.

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains.

Schramm A, Hakkarainen TV, Tommila J, Guina M.

Nanoscale Res Lett. 2015 Dec;10(1):938. doi: 10.1186/s11671-015-0938-8. Epub 2015 May 28.

13.

High-gain 1.3  μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10  Gb/s.

Fitsios D, Giannoulis G, Korpijärvi VM, Viheriälä J, Laakso A, Iliadis N, Dris S, Spyropoulou M, Avramopoulos H, Kanellos GT, Pleros N, Guina M.

Appl Opt. 2015 Jan 1;54(1):46-52. doi: 10.1364/AO.54.000046.

PMID:
25967005
14.

Mode-locked Tm,Ho:KLu(WO(4))(2) laser at 2060 nm using InGaSb-based SESAMs.

Aleksandrov V, Gluth A, Petrov V, Buchvarov I, Steinmeyer G, Paajaste J, Suomalainen S, Härkönen A, Guina M, Mateos X, Díaz F, Griebner U.

Opt Express. 2015 Feb 23;23(4):4614-9. doi: 10.1364/OE.23.004614.

PMID:
25836498
15.

GaSb-based SESAM mode-locked Tm:YAG ceramic laser at 2 µm.

Gluth A, Wang Y, Petrov V, Paajaste J, Suomalainen S, Härkönen A, Guina M, Steinmeyer G, Mateos X, Veronesi S, Tonelli M, Li J, Pan Y, Guo J, Griebner U.

Opt Express. 2015 Jan 26;23(2):1361-9. doi: 10.1364/OE.23.001361.

PMID:
25835894
16.

Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

Tuominen M, Yasir M, Lång J, Dahl J, Kuzmin M, Mäkelä J, Punkkinen M, Laukkanen P, Kokko K, Schulte K, Punkkinen R, Korpijärvi VM, Polojärvi V, Guina M.

Phys Chem Chem Phys. 2015 Mar 14;17(10):7060-6. doi: 10.1039/c4cp05972g.

PMID:
25686555
17.

SESAM mode-locked red praseodymium laser.

Gaponenko M, Metz PW, Härkönen A, Heuer A, Leinonen T, Guina M, Südmeyer T, Huber G, Kränkel C.

Opt Lett. 2014 Dec 15;39(24):6939-41. doi: 10.1364/OL.39.006939.

PMID:
25503035
18.

Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization.

Orsila L, Härkönen A, Hyyti J, Guina M, Steinmeyer G.

Opt Lett. 2014 Aug 1;39(15):4384-7. doi: 10.1364/OL.39.004384.

PMID:
25078183
19.

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi.

Wu M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2014 May 23;25(20):205605. doi: 10.1088/0957-4484/25/20/205605. Epub 2014 Apr 30.

PMID:
24786304
20.

High-efficiency 20 W yellow VECSEL.

Kantola E, Leinonen T, Ranta S, Tavast M, Guina M.

Opt Express. 2014 Mar 24;22(6):6372-80. doi: 10.1364/OE.22.006372.

PMID:
24663985

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