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Items: 7


Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.

Schatzl M, Hackl F, Glaser M, Rauter P, Brehm M, Spindlberger L, Simbula A, Galli M, Fromherz T, Schäffler F.

ACS Photonics. 2017 Mar 15;4(3):665-673. doi: 10.1021/acsphotonics.6b01045. Epub 2017 Feb 13.


Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si.

Grydlik M, Lusk MT, Hackl F, Polimeni A, Fromherz T, Jantsch W, Schäffler F, Brehm M.

Nano Lett. 2016 Nov 9;16(11):6802-6807. Epub 2016 Oct 6.


Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Grydlik M, Hackl F, Groiss H, Glaser M, Halilovic A, Fromherz T, Jantsch W, Schäffler F, Brehm M.

ACS Photonics. 2016 Feb 17;3(2):298-303. Epub 2016 Jan 26.


High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals.

Yakunin S, Dirin DN, Protesescu L, Sytnyk M, Tollabimazraehno S, Humer M, Hackl F, Fromherz T, Bodnarchuk MI, Kovalenko MV, Heiss W.

ACS Nano. 2014 Dec 23;8(12):12883-94. doi: 10.1021/nn5067478. Epub 2014 Dec 8.


Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.

Bednorz M, Matt GJ, Głowacki ED, Fromherz T, Brabec CJ, Scharber MC, Sitter H, Sariciftci NS.

Org Electron. 2013 May;14(5):1344-1350.


Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands.

Brehm M, Lichtenberger H, Fromherz T, Springholz G.

Nanoscale Res Lett. 2011 Jan 12;6(1):70. doi: 10.1186/1556-276X-6-70.


Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Brehm M, Grydlik M, Hackl F, Lausecker E, Fromherz T, Bauer G.

Nanoscale Res Lett. 2010 Aug 5;5(12):1868-72. doi: 10.1007/s11671-010-9713-z.

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