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Items: 3

1.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

Manna S, Ashok VD, De SK.

ACS Appl Mater Interfaces. 2010 Dec;2(12):3539-43. doi: 10.1021/am100712h. Epub 2010 Dec 1.

PMID:
21121615
2.

GaN nanostructure-based light emitting diodes and semiconductor lasers.

Viswanath AK.

J Nanosci Nanotechnol. 2014 Feb;14(2):1947-82. Review.

PMID:
24749467
3.

Prospects of III-nitride optoelectronics grown on Si.

Zhu D, Wallis DJ, Humphreys CJ.

Rep Prog Phys. 2013 Oct;76(10):106501. doi: 10.1088/0034-4885/76/10/106501. Epub 2013 Oct 3. Review.

PMID:
24088511

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