Format

Send to

Choose Destination

Links from PubMed

See comment in PubMed Commons below
Appl Opt. 1987 Jul 1;26(13):2621-4. doi: 10.1364/AO.26.002621.

Low loss Si(3)N(4)-SiO(2) optical waveguides on Si.

Abstract

We have developed an optical integrated circuit waveguide technology based on conventional Si processing. We demonstrate waveguide losses of <0.3 dB/cm in the 1.3-1.6-microm wavelength range. We use a high refractive-index core of Si(3)N(4) surrounded by SiO(2) cladding layers, which provides a highly confined optical mode adequate for butt coupling to channel substrate buried heterostructure lasers. We report the first IR transmission experiments in these waveguides and find two absorption peaks associated with H in SiO(2) and Si(3)N(4) layers at 1.40 and 1.52 microm, respectively. The peak absorptions are 2.2 and 1.2 dB/cm, respectively, and these peaks can be largely removed by annealing at 1100-1200 degrees C.

PMID:
20489931
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Loading ...
    Support Center