The operation at 1.5 microm of a silicon Fabry-Perot optical modulator is reported. The electrically driven device, which uses the thermo-optic effect to achieve as much as a 55% intensity modulation depth, has been realized by means of standard silicon microelectronic technology. This demonstrates that this new type of optical modulator can easily be integrated with electronic circuits. An accurate three-dimensional thermal analysis of the device has permitted the setup of a reliable numerical code aimed at the design of optimized integrated versions of it. The simulation outputs therefore predict operation frequencies of hundreds of kilohertz, remarkably superior to those previously reported in thermo-optic-effect-based modulators.