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Appl Opt. 2005 Dec 20;44(36):7810-3.

Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser.

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  • 1Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, 150 Duckjin-Dong Yuseong-Gu, Daejon 305-353, Republic of Korea.


We have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.

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