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Opt Lett. 2003 May 15;28(10):843-5.

Fabrication and performance of a medium-dependent SiO2/Si photonic heterostructure device.

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Surface Physics Laboratory, Fudan University, Shanghai, 200433, China.


An optical device based on a photonic bandgap heterostructure is designed, fabricated, and characterized. The sample contains two sets of Si/SiO2 photonic crystals with different periods. When the device is working in air, it reflects omnidirectionally both TE and TM mode lights at the wavelength near 1.3 microm. The reflectivity measured in the bandgap is higher than 98% in an incident angle range 0 degrees-70 degrees. When the device is surrounded with silica (n > 1.33), it permits the total transmission for the TM mode but prevents the TE mode from propagating, thus behaving as a polarization splitter. The experimental extinction ratio of the reflected TE/TM is approximately 31 dB. The uniformity of the device performance over a large sample area is demonstrated.


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