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Items: 1 to 20 of 198

1.

Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.

Buyanov AV, Ferreira AC, Söderström E, Buyanova IA, Holtz PO, Sernelius B, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1996 Jan 15;53(3):1357-1361. No abstract available.

PMID:
9983595
2.

Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells.

Kirchner M, Schüller C, Kraus J, Schaack G, Panzlaff K, Weimann G.

Phys Rev B Condens Matter. 1993 Apr 15;47(15):9706-9709. No abstract available.

PMID:
10005041
3.

Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs/AlxGa1-xAs quantum wells.

Dür M, Goodnick SM, Lugli P.

Phys Rev B Condens Matter. 1996 Dec 15;54(24):17794-17804. No abstract available.

PMID:
9985911
4.

Absorption saturation of intersubband optical transitions in GaAs/AlxGa1-xAs multiple quantum wells.

Cui Df, Chen Zh, Pan Sh, Lu Hb, Yang Gz.

Phys Rev B Condens Matter. 1993 Mar 15;47(11):6755-6757. No abstract available.

PMID:
10004652
5.

Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation.

Hartig M, Haacke S, Deveaud B, Rota L.

Phys Rev B Condens Matter. 1996 Nov 15;54(20):R14269-R14272. No abstract available.

PMID:
9985504
6.

Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells.

Huang D, Gumbs G, Manasreh MO.

Phys Rev B Condens Matter. 1995 Nov 15;52(19):14126-14130. No abstract available.

PMID:
9980632
7.
8.

Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells.

Lee S, Galbraith I I, Pidgeon CR.

Phys Rev B Condens Matter. 1995 Jul 15;52(3):1874-1881. No abstract available.

PMID:
9981255
9.

Reply to "Comment on 'Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells"'

Huang D, Manasreh MO, Gumbs G.

Phys Rev B Condens Matter. 1996 Oct 15;54(15):10980-10981. No abstract available.

PMID:
9984898
10.

Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wells.

Harris CI, Monemar B, Kalt H, Holtz PO, Sundaram M, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1994 Dec 15;50(24):18367-18374. No abstract available.

PMID:
9976273
11.

Intrawell and interwell coupling of plasmons in multilayer modulation-doped GaAs/AlxGa1-xAs quantum wells.

Fasol G, King-Smith RD, Richards D, Ekenberg U, Mestres N, Ploog K.

Phys Rev B Condens Matter. 1989 Jun 15;39(17):12695-12703. No abstract available.

PMID:
9948139
12.

Photoluminescence excitation spectroscopy of Be-remotely-doped wide parabolic GaAs/AlxGa1-xAs quantum wells.

Burnett JH, Cheong HM, Paul W, Hopkins PF, Gossard AC.

Phys Rev B Condens Matter. 1993 Sep 15;48(11):7940-7943. No abstract available.

PMID:
10006980
13.

Magneto-optical studies of screened excitons in GaAs/AlxGa1-xAs modulation-doped quantum wells.

Henriques AB, Chidley ET, Nicholas RJ, Dawson P, Foxon CT.

Phys Rev B Condens Matter. 1992 Aug 15;46(7):4047-4052. No abstract available.

PMID:
10004134
14.

Fermi enhancement and band-gap renormalization of AlxGa1-xAs/GaAs modulation-doped quantum wells.

Haacke S, Zimmermann R, Bimberg D, Kal H, Mars DE, Miller JN.

Phys Rev B Condens Matter. 1992 Jan 15;45(4):1736-1741. No abstract available.

PMID:
10001674
15.

Decay measurements of free- and bound-exciton recombination in doped GaAs/AlxGa1-xAs quantum wells.

Bergman JP, Holtz PO, Monemar B, Sundaram M, Merz JL, Gossard AC.

Phys Rev B Condens Matter. 1991 Feb 15;43(6):4765-4770. No abstract available.

PMID:
9997845
16.

Photoluminescence excitation spectroscopy of remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells.

Burnett JH, Cheong HM, Paul W, Hopkins PF, Gwinn EG, Rimberg AJ, Westervelt RM, Sundaram M, Gossard AC.

Phys Rev B Condens Matter. 1991 May 15;43(14):12033-12035. No abstract available.

PMID:
9996982
17.

Optical anisotropy in GaAs/AlxGa1-xAs multiple quantum wells under thermally induced uniaxial strain.

Shen H, Wraback M, Pamulapati J, Newman PG, Dutta M, Lu Y, Kuo HC.

Phys Rev B Condens Matter. 1993 May 15;47(20):13933-13936. No abstract available.

PMID:
10005729
18.

Resonant inelastic light scattering in remotely doped wide parabolic GaAs/AlxGa1-xAs quantum wells.

Burnett JH, Cheong HM, Westervelt RM, Paul W, Hopkins PF, Sundaram M, Gossard AC.

Phys Rev B Condens Matter. 1993 Aug 15;48(7):4524-4529. No abstract available.

PMID:
10008931
19.

Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1-xAs single quantum wells.

Harris CI, Monemar B, Brunthaler G, Kalt H, Köhler K.

Phys Rev B Condens Matter. 1992 Feb 15;45(8):4227-4236. No abstract available.

PMID:
10002036
20.

Many-body optical-edge singularity in absorption spectra of GaAs/AlxGa1-xAs modulation-doped quantum wells.

Wu JW.

Phys Rev B Condens Matter. 1989 Apr 15;39(11):7992-7995. No abstract available.

PMID:
9947488

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