Similar articles for PMID: 9979457

Year	Number of Results
1985	9
1986	15
1987	3
1988	4
1989	10
1990	10
1991	11
1992	5
1993	11
1994	9
1995	9
1996	9
2001	1
2003	1
2009	1
2015	1
2017	2
2024	0

1

Time-resolved photoluminescence of spatially direct and indirect transitions in GaAs /AlxGa1-xAs wires.

Hirler F, Zrenner A, Strenz R, Abstreiter G, Böhm G, Weimann G. Hirler F, et al. Phys Rev B Condens Matter. 1995 Feb 15;51(8):5554-5557. doi: 10.1103/physrevb.51.5554. Phys Rev B Condens Matter. 1995. PMID: 9979457 No abstract available.

2

Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.

Reynolds DC, Evans KR, Stutz CE, Yu PW. Reynolds DC, et al. Phys Rev B Condens Matter. 1991 Feb 15;43(5):4244-4248. doi: 10.1103/physrevb.43.4244. Phys Rev B Condens Matter. 1991. PMID: 9997775 No abstract available.

3

Temperature dependence of photoemission characteristics from Al_xGa_1-xAs/GaAs photocathodes.

Wang K, Wang G, Chang B, Tran H, Fu R. Wang K, et al. Appl Opt. 2017 Jul 20;56(21):6015-6021. doi: 10.1364/AO.56.006015. Appl Opt. 2017. PMID: 29047924

4

Long-lived spatially indirect excitons in coupled GaAs/AlxGa1-xAs quantum wells.

Golub JE, Kash K, Harbison JP, Florez LT. Golub JE, et al. Phys Rev B Condens Matter. 1990 Apr 15;41(12):8564-8567. doi: 10.1103/physrevb.41.8564. Phys Rev B Condens Matter. 1990. PMID: 9993192 No abstract available.

5

Effect of graded bandgap structure on photoelectric performance of transmission-mode Al_xGa_1-xAs/GaAs photocathode modules.

Feng C, Zhang Y, Liu J, Qian Y, Liu X, Shi F, Cheng H. Feng C, et al. Appl Opt. 2017 Nov 10;56(32):9044-9049. doi: 10.1364/AO.56.009044. Appl Opt. 2017. PMID: 29131191

6

Time-resolved photoluminescence of spatially direct and indirect transitions in shallow etched quantum-well wires.

Poole PJ, Charbonneau S, Fritze M, Nurmikko AV. Poole PJ, et al. Phys Rev B Condens Matter. 1994 Apr 15;49(16):11504-11507. doi: 10.1103/physrevb.49.11504. Phys Rev B Condens Matter. 1994. PMID: 10010016 No abstract available.

7

One-dimensional magneto-excitons in GaAs/AlxGa1-xAs quantum wires.

Kohl M, Heitmann D, Grambow P, Ploog K. Kohl M, et al. Phys Rev Lett. 1989 Nov 6;63(19):2124-2127. doi: 10.1103/PhysRevLett.63.2124. Phys Rev Lett. 1989. PMID: 10040768 No abstract available.

8

Edge-magnetoplasma excitations in GaAs-AlxGa1-xAs quantum wires.

Grodnensky I I, Heitmann D, Klitzing Kv, Ploog K, Rudenko A, Kamaev A. Grodnensky I I, et al. Phys Rev B Condens Matter. 1994 Apr 15;49(15):10778-10781. doi: 10.1103/physrevb.49.10778. Phys Rev B Condens Matter. 1994. PMID: 10009915 No abstract available.

9

Magnetoresistance over the intermediate localization regime in GaAs/AlxGa1-xAs quantum wires.

Mani RG, von Klitzing K, Ploog K. Mani RG, et al. Phys Rev B Condens Matter. 1993 Aug 15;48(7):4571-4574. doi: 10.1103/physrevb.48.4571. Phys Rev B Condens Matter. 1993. PMID: 10008936 No abstract available.

10

Carrier relaxation in intermixed GaAs/AlxGa1-xAs quantum wires.

Mayer G, Prins FE, Lehr G, Schweizer H, Leier H, Maile BE, Straka J, Forchel A, Weimann G. Mayer G, et al. Phys Rev B Condens Matter. 1993 Feb 15;47(7):4060-4063. doi: 10.1103/physrevb.47.4060. Phys Rev B Condens Matter. 1993. PMID: 10006532 No abstract available.

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