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Items: 1 to 20 of 60

1.

Scale invariance and dynamical correlations in growth models of molecular beam epitaxy.

Das Sarma S, Lanczycki CJ, Kotlyar R, Ghaisas SV.

Phys Rev E Stat Phys Plasmas Fluids Relat Interdiscip Topics. 1996 Jan;53(1):359-388. No abstract available.

PMID:
9964268
2.

Optical properties and dynamical behavior of localized and bound excitons in Cd1-xMnxTe (x=4%) grown by molecular-beam epitaxy.

Akinaga H, Takita K, Sasaki S, Takeyama S, Miura N, Nakayama T, Minami F, Inoue K.

Phys Rev B Condens Matter. 1992 Nov 15;46(20):13136-13141. No abstract available.

PMID:
10003353
3.

Growth equations for the Wolf-Villain and Das Sarma-Tamborenea models of molecular-beam epitaxy.

Huang ZF, Gu BL.

Phys Rev E Stat Phys Plasmas Fluids Relat Interdiscip Topics. 1996 Dec;54(6):5935-5941. No abstract available.

PMID:
9965809
4.

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).

Liao XZ, Zou J, Cockayne DJ, Matsumura S.

Ultramicroscopy. 2004 Jan;98(2-4):239-47.

PMID:
15046804
5.

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy.

Ni W, Knall J, Hasan MA, Hansson GV, Sundgren J, Barnett SA, Markert LC, Greene JE.

Phys Rev B Condens Matter. 1989 Nov 15;40(15):10449-10459. No abstract available.

PMID:
9991593
6.

ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth.

Etgens VH, Sauvage-Simkin M, Pinchaux R, Massies J, Jedrecy N, Waldhauer A, Tatarenko S, Jouneau PH.

Phys Rev B Condens Matter. 1993 Apr 15;47(16):10607-10612. No abstract available.

PMID:
10005175
7.

Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy.

Ide T, Yamashita A, Mizutani T.

Phys Rev B Condens Matter. 1992 Jul 15;46(3):1905-1908. No abstract available.

PMID:
10003854
8.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

Zaleszczyk W, Janik E, Presz A, DĹ‚uzewski P, Kret S, Szuszkiewicz W, Morhange JF, Dynowska E, Kirmse H, Neumann W, Petroutchik A, Baczewski LT, Karczewski G, Wojtowicz T.

Nano Lett. 2008 Nov;8(11):4061-5. doi: 10.1021/nl802449g. Epub 2008 Oct 9.

PMID:
18842031
9.

Limiting thickness versus epitaxial-growth temperature in molecular-beam epitaxy.

Das Sarma S, Tamborenea PI.

Phys Rev B Condens Matter. 1992 Jul 15;46(3):1925-1928. No abstract available.

PMID:
10003859
10.

Computer simulation studies of the growth of strained layers by molecular-beam epitaxy.

Faux DA, Gaynor G, Carson CL, Hall CK, Bernholc J.

Phys Rev B Condens Matter. 1990 Aug 15;42(5):2914-2922. No abstract available.

PMID:
9995781
11.

Growth of alkali halides by molecular-beam epitaxy.

Yang MH, Flynn CP.

Phys Rev B Condens Matter. 1990 Apr 15;41(12):8500-8508. No abstract available.

PMID:
9993176
12.

Low-temperature growth of MgO by molecular-beam epitaxy.

Yadavalli S, Yang MH, Flynn CP.

Phys Rev B Condens Matter. 1990 Apr 15;41(11):7961-7963. No abstract available.

PMID:
9993115
13.

Adsorption and film growth of C60 on the GaAs(001) 2 x 6 surface by molecular-beam epitaxy.

Xue Q, Ogino T, Hasegawa Y, Shinohara H, Sakurai T.

Phys Rev B Condens Matter. 1996 Jan 15;53(4):1985-1989. No abstract available.

PMID:
9983660
14.

Onset of fast step-velocity oscillations during growth by molecular-beam epitaxy.

Harris S.

Phys Rev B Condens Matter. 1995 Feb 15;51(7):4415-4417. No abstract available.

PMID:
9979285
15.

Atomistic growth mechanisms for the molecular-beam epitaxy of a model system.

Paik SM, Das Sarma S.

Phys Rev B Condens Matter. 1989 May 15;39(14):9793-9796. No abstract available.

PMID:
9947751
16.

Growth mechanism for molecular-beam epitaxy of group-IV semiconductors.

Clarke S, Vvedensky DD.

Phys Rev B Condens Matter. 1988 Apr 15;37(11):6559-6562. No abstract available.

PMID:
9943917
17.

Surface growth in a model of molecular-beam epitaxy with correlated noise.

Lam PM, Family F.

Phys Rev A. 1991 Oct 15;44(8):4854-4860. No abstract available.

PMID:
9906536
18.
19.

A molecular beam epitaxy facility for in situ neutron scattering.

Dura JA, LaRock J.

Rev Sci Instrum. 2009 Jul;80(7):073906. doi: 10.1063/1.3169506.

PMID:
19655964
20.

Formation of facets and pyramidlike structures in molecular-beam-epitaxy growth of Si on a singular Si(111) surface.

Yang H, Wang G, Lu T.

Phys Rev B Condens Matter. 1995 May 15;51(20):14293-14299. No abstract available.

PMID:
9978358

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