Similar articles for PMID: 32040646

Year	Number of Results
1892	1
2002	1
2003	1
2005	2
2007	1
2008	5
2009	3
2010	2
2011	5
2012	5
2013	10
2014	4
2015	10
2016	8
2017	10
2018	8
2019	15
2020	14
2021	8
2022	6
2023	2
2024	0

1

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.

Zhang Y, Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Yang J, Liu S. Zhang Y, et al. Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9. Nanoscale Res Lett. 2020. PMID: 32040646 Free PMC article.

2

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

3

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L. Liang F, et al. Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026. Nanomaterials (Basel). 2018. PMID: 30544659 Free PMC article.

4

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry.

Reshchikov MA, Vorobiov M, Andrieiev O, Ding K, Izyumskaya N, Avrutin V, Usikov A, Helava H, Makarov Y. Reshchikov MA, et al. Sci Rep. 2020 Feb 10;10(1):2223. doi: 10.1038/s41598-020-59033-z. Sci Rep. 2020. PMID: 32041980 Free PMC article.

5

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT.

Dai JJ, Mai TT, Wu SK, Peng JR, Liu CW, Wen HC, Chou WC, Ho HC, Wang WF. Dai JJ, et al. Nanomaterials (Basel). 2021 Jul 7;11(7):1766. doi: 10.3390/nano11071766. Nanomaterials (Basel). 2021. PMID: 34361152 Free PMC article.

6

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response.

Maraj M, Nabi G, Usman K, Wang E, Wei W, Wang Y, Sun W. Maraj M, et al. Materials (Basel). 2020 Aug 11;13(16):3537. doi: 10.3390/ma13163537. Materials (Basel). 2020. PMID: 32796564 Free PMC article.

7

Comparison of Si doping effect on GaN nanowires and films synthesized by metal-organic chemical vapor deposition.

Maeng J, Kwon MK, Kwon SS, Jo G, Song S, Kim TW, Choi BS, Park SJ, Lee T. Maeng J, et al. J Nanosci Nanotechnol. 2008 Oct;8(10):4934-9. doi: 10.1166/jnn.2008.1032. J Nanosci Nanotechnol. 2008. PMID: 19198366

8

MOCVD Growth and Characterization of Be-Doped GaN.

McEwen B, Reshchikov MA, Rocco E, Meyers V, Hogan K, Andrieiev O, Vorobiov M, Demchenko DO, Shahedipour-Sandvik F. McEwen B, et al. ACS Appl Electron Mater. 2022 Aug 23;4(8):3780-3785. doi: 10.1021/acsaelm.1c01276. Epub 2022 Aug 8. ACS Appl Electron Mater. 2022. PMID: 36035967 Free PMC article.

9

General control of transition-metal-doped GaN nanowire growth: toward understanding the mechanism of dopant incorporation.

Stamplecoskie KG, Ju L, Farvid SS, Radovanovic PV. Stamplecoskie KG, et al. Nano Lett. 2008 Sep;8(9):2674-81. doi: 10.1021/nl8009523. Epub 2008 Aug 7. Nano Lett. 2008. PMID: 18683987

10

Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence.

Chen Z, Zhang Y, Zhao H. Chen Z, et al. Opt Express. 2020 Aug 31;28(18):26651-26660. doi: 10.1364/OE.399986. Opt Express. 2020. PMID: 32906935 Free article.

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Results by year

Text availability

Article attribute

Article type

Publication date

116 results

Results by year