Similar articles for PMID: 31968427

Year	Number of Results
2010	3
2011	3
2012	6
2013	8
2014	10
2015	8
2016	16
2017	22
2018	32
2019	41
2020	56
2021	64
2022	45
2023	9
2024	0

1

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment.

Chen YM, Wu CH, Chang KM, Zhang YX, Xu N, Yu TY, Chin A. Chen YM, et al. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4110-4113. doi: 10.1166/jnn.2020.17556. J Nanosci Nanotechnol. 2020. PMID: 31968427

2

Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment.

Wu CH, Chang KM, Chen YM, Zhang YX, Tan YH. Wu CH, et al. J Nanosci Nanotechnol. 2019 Apr 1;19(4):2306-2309. doi: 10.1166/jnn.2019.15995. J Nanosci Nanotechnol. 2019. PMID: 30486988

3

Study of In-Situ Hydrogen Plasma Treatment on InGaZnO with Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition.

Wu CH, Chang KM, Chen YM, Zhang YX, Tan YH. Wu CH, et al. J Nanosci Nanotechnol. 2019 Apr 1;19(4):2310-2313. doi: 10.1166/jnn.2019.15997. J Nanosci Nanotechnol. 2019. PMID: 30486989

4

The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

Wu CH, Huang BW, Chang KM, Wang SJ, Lin JH, Hsu JM. Wu CH, et al. J Nanosci Nanotechnol. 2016 Jun;16(6):6044-8. doi: 10.1166/jnn.2016.12612. J Nanosci Nanotechnol. 2016. PMID: 27427669

5

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

Wu CH, Chang KM, Chen YM, Huang BW, Zhang YX, Wang SJ. Wu CH, et al. J Nanosci Nanotechnol. 2018 Mar 1;18(3):1917-1921. doi: 10.1166/jnn.2018.14976. J Nanosci Nanotechnol. 2018. PMID: 29448683

6

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O₂ Mixed Plasma Treatment and Rapid Thermal Annealing.

Liu WS, Hsu CH, Jiang Y, Lai YC, Kuo HC. Liu WS, et al. Membranes (Basel). 2021 Dec 30;12(1):49. doi: 10.3390/membranes12010049. Membranes (Basel). 2021. PMID: 35054574 Free PMC article.

7

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.

Kim SH, Cho WJ. Kim SH, et al. J Nanosci Nanotechnol. 2020 Aug 1;20(8):4671-4677. doi: 10.1166/jnn.2020.17802. J Nanosci Nanotechnol. 2020. PMID: 32126639

8

Amorphous IGZO TFT with High Mobility of ∼70 cm²/(V s) via Vertical Dimension Control Using PEALD.

Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS. Sheng J, et al. ACS Appl Mater Interfaces. 2019 Oct 30;11(43):40300-40309. doi: 10.1021/acsami.9b14310. Epub 2019 Oct 17. ACS Appl Mater Interfaces. 2019. PMID: 31584254

9

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.

Li ZY, Song SM, Wang WX, Gong JH, Tong Y, Dai MJ, Lin SS, Yang TL, Sun H. Li ZY, et al. Nanotechnology. 2022 Oct 28;34(2). doi: 10.1088/1361-6528/ac990f. Nanotechnology. 2022. PMID: 36219884

10

Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition.

Wu CH, Chang KM, Chen YM, Huang BW, Zhang YX, Wang SJ, Hsu JM. Wu CH, et al. J Nanosci Nanotechnol. 2018 Mar 1;18(3):2054-2057. doi: 10.1166/jnn.2018.14977. J Nanosci Nanotechnol. 2018. PMID: 29448711

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Results by year

Text availability

Article attribute

Article type

Publication date

317 results

Results by year