Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 103

1.

Angular color variation in micron-scale light-emitting diode arrays.

Yang SM, Wang PH, Chao CH, Chu CW, Yeh YT, Chen YS, Chang FP, Fang YH, Lin CC, Wu CI.

Opt Express. 2019 Aug 5;27(16):A1308-A1323. doi: 10.1364/OE.27.0A1308.

PMID:
31510595
2.

On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication.

Carreira JFC, Xie E, Bian R, Chen C, McKendry JJD, Guilhabert B, Haas H, Gu E, Dawson MD.

Opt Express. 2019 Sep 30;27(20):A1517-A1528. doi: 10.1364/OE.27.0A1517.

PMID:
31684503
3.

Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon.

Wang R, Nguyen HP, Connie AT, Lee J, Shih I, Mi Z.

Opt Express. 2014 Dec 15;22 Suppl 7:A1768-75. doi: 10.1364/OE.22.0A1768.

PMID:
25607491
4.

Angular color shift of micro-LED displays.

Gou F, Hsiang EL, Tan G, Chou PT, Li YL, Lan YF, Wu ST.

Opt Express. 2019 Jun 10;27(12):A746-A757. doi: 10.1364/OE.27.00A746.

PMID:
31252851
5.

Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode.

Kim HK, Park YJ, Kang JH, Han N, Han M, Ryu BD, Ko KB, Yang JH, Kim YT, Chandramohan S, Jeong H, Jeong MS, Hong CH.

Opt Lett. 2013 May 1;38(9):1491-3. doi: 10.1364/OL.38.001491.

PMID:
23632528
6.

Light extraction analysis and enhancement in a quantum dot light emitting diode.

Zhu R, Luo Z, Wu ST.

Opt Express. 2014 Dec 15;22 Suppl 7:A1783-98. doi: 10.1364/OE.22.0A1783.

PMID:
25607493
7.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
8.

Color distribution from multicolor LED arrays.

Moreno I, Contreras U.

Opt Express. 2007 Mar 19;15(6):3607-18.

PMID:
19532605
9.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.

Jiang S, Feng Y, Chen Z, Zhang L, Jiang X, Jiao Q, Li J, Chen Y, Li D, Liu L, Yu T, Shen B, Zhang G.

Sci Rep. 2016 Feb 23;6:21573. doi: 10.1038/srep21573.

10.

Optical Analysis of Power Distribution in Top-Emitting Organic Light Emitting Diodes Integrated with Nanolens Array Using Finite Difference Time Domain.

Han KH, Park YS, Cho DH, Han Y, Lee J, Yu B, Cho NS, Lee JI, Kim JJ.

ACS Appl Mater Interfaces. 2018 Jun 6;10(22):18942-18947. doi: 10.1021/acsami.8b02631. Epub 2018 May 24.

PMID:
29749737
11.

Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes.

Moon YJ, Moon D, Jang J, Na JY, Song JH, Seo MK, Kim S, Bae D, Park EH, Park Y, Kim SK, Yoon E.

Nano Lett. 2016 May 11;16(5):3301-8. doi: 10.1021/acs.nanolett.6b00892. Epub 2016 Apr 7.

PMID:
27045458
12.

A Vision toward Ultimate Optical Out-Coupling for Organic Light-Emitting Diode Displays: 3D Pixel Configuration.

Chen YJ, Lee WK, Chen YT, Lin CY, Wen SW, Jiao M, Su GD, Lin HY, Visser RJ, Kwak BL, Chen CC, Lin WY, Wang S, Chang CP, Wu CC.

Adv Sci (Weinh). 2018 Aug 29;5(10):1800467. doi: 10.1002/advs.201800467. eCollection 2018 Oct.

13.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Ee YK, Kumnorkaew P, Arif RA, Tong H, Gilchrist JF, Tansu N.

Opt Express. 2009 Aug 3;17(16):13747-57.

PMID:
19654782
14.

Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode.

Ou Y, Corell DD, Dam-Hansen C, Petersen PM, Ou H.

Opt Express. 2011 Mar 14;19 Suppl 2:A166-72. doi: 10.1364/OE.19.00A166.

PMID:
21445218
15.

Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

Sheu JK, Chen FB, Wang YC, Chang CC, Huang SH, Liu CN, Lee ML.

Opt Express. 2015 Apr 6;23(7):A232-9. doi: 10.1364/OE.23.00A232.

PMID:
25968789
16.

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Wei T, Ji X, Wu K, Zheng H, Du C, Chen Y, Yan Q, Zhao L, Zhou Z, Wang J, Li J.

Opt Lett. 2014 Jan 15;39(2):379-82. doi: 10.1364/OL.39.000379.

PMID:
24562151
17.

How Effective is Plasmonic Enhancement of Colloidal Quantum Dots for Color-Conversion Light-Emitting Devices?

Park HC, Isnaeni, Gong S, Cho YH.

Small. 2017 Dec;13(48). doi: 10.1002/smll.201701805. Epub 2017 Nov 9.

PMID:
29120086
18.

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography.

Byeon KJ, Cho JY, Kim J, Park H, Lee H.

Opt Express. 2012 May 7;20(10):11423-32. doi: 10.1364/OE.20.011423.

PMID:
22565762
19.

Microscale hemisphere patterned backside mirror for GaN-based light-emitting diodes.

Huang H, Hu H, Wang H, Geng K.

Appl Opt. 2015 Nov 20;54(33):9791-8. doi: 10.1364/AO.54.009791.

PMID:
26836539
20.

Light-output enhancement of GaN-based light-emitting diodes with three-dimensional backside reflectors patterned by microscale cone array.

Huang H, Hu J, Wang H.

ScientificWorldJournal. 2014;2014:837586. doi: 10.1155/2014/837586. Epub 2014 Jul 15.

Supplemental Content

Support Center