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Items: 1 to 20 of 101

1.

Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform.

Dong B, Luo X, Zhu S, Hu T, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Ma Y, Vachon P, Lo GQ, Ang KW, Kwong DL, Lee C.

Opt Express. 2019 Jul 8;27(14):19815-19826. doi: 10.1364/OE.27.019815.

PMID:
31503736
2.

Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics.

Dong B, Luo X, Zhu S, Li M, Hasan D, Zhang L, Chua SJ, Wei J, Chang Y, Lo GQ, Ang KW, Kwong DL, Lee C.

Opt Lett. 2019 Jan 1;44(1):73-76. doi: 10.1364/OL.44.000073.

PMID:
30645551
3.

Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

Xiong C, Pernice WH, Tang HX.

Nano Lett. 2012 Jul 11;12(7):3562-8. doi: 10.1021/nl3011885. Epub 2012 Jun 6.

PMID:
22663299
4.

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications.

Muñoz P, Micó G, Bru LA, Pastor D, Pérez D, Doménech JD, Fernández J, Baños R, Gargallo B, Alemany R, Sánchez AM, Cirera JM, Mas R, Domínguez C.

Sensors (Basel). 2017 Sep 12;17(9). pii: E2088. doi: 10.3390/s17092088.

5.

Effect of thermal annealing on the structural and optical properties of tris-(8-hydroxyquinoline)aluminum(III) (Alq3 ) films.

Cuba M, Muralidharan G.

Luminescence. 2015 May;30(3):352-7. doi: 10.1002/bio.2738. Epub 2014 Jul 18.

PMID:
25044340
6.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

Ikeda K, Saperstein RE, Alic N, Fainman Y.

Opt Express. 2008 Aug 18;16(17):12987-94.

PMID:
18711537
7.

Monolithically Integrated Si-on-AlN Mid-Infrared Photonic Chips for Real-Time and Label-Free Chemical Sensing.

Jin T, Lin HG, Lin PT.

ACS Appl Mater Interfaces. 2017 Dec 13;9(49):42905-42911. doi: 10.1021/acsami.7b13307. Epub 2017 Dec 4.

PMID:
29171251
8.

Suspended polarization beam splitter on silicon-on-insulator.

Errando-Herranz C, Das S, Gylfason KB.

Opt Express. 2018 Feb 5;26(3):2675-2681. doi: 10.1364/OE.26.002675.

PMID:
29401805
9.

High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics.

Pernice WH, Xiong C, Tang HX.

Opt Express. 2012 May 21;20(11):12261-9. doi: 10.1364/OE.20.012261.

PMID:
22714215
10.

Mid-infrared wavelength division (de)multiplexer using an interleaved angled multimode interferometer on the silicon-on-insulator platform.

Hu Y, Li T, Thomson DJ, Chen X, Penades JS, Khokhar AZ, Mitchell CJ, Reed GT, Mashanovich GZ.

Opt Lett. 2014 Mar 15;39(6):1406-9. doi: 10.1364/OL.39.001406.

PMID:
24690799
11.

Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

Lu TJ, Fanto M, Choi H, Thomas P, Steidle J, Mouradian S, Kong W, Zhu D, Moon H, Berggren K, Kim J, Soltani M, Preble S, Englund D.

Opt Express. 2018 Apr 30;26(9):11147-11160. doi: 10.1364/OE.26.011147.

PMID:
29716039
12.

Mid-infrared high-Q germanium microring resonator.

Xiao TH, Zhao Z, Zhou W, Chang CY, Set SY, Takenaka M, Tsang HK, Cheng Z, Goda K.

Opt Lett. 2018 Jun 15;43(12):2885-2888. doi: 10.1364/OL.43.002885.

PMID:
29905715
13.
14.

Polarization rotator-splitters and controllers in a Si3N4-on-SOI integrated photonics platform.

Sacher WD, Huang Y, Ding L, Barwicz T, Mikkelsen JC, Taylor BJ, Lo GQ, Poon JK.

Opt Express. 2014 May 5;22(9):11167-74. doi: 10.1364/OE.22.011167.

PMID:
24921814
15.

Crystallization behavior of silicon quantum dots in a silicon nitride matrix.

Ha R, Kim S, Kim HJ, Lee JC, Bae JS, Kim Y.

J Nanosci Nanotechnol. 2012 Feb;12(2):1448-52.

PMID:
22629976
16.

Graded SiGe waveguides with broadband low-loss propagation in the mid infrared.

Ramirez JM, Liu Q, Vakarin V, Frigerio J, Ballabio A, Le Roux X, Bouville D, Vivien L, Isella G, Marris-Morini D.

Opt Express. 2018 Jan 22;26(2):870-877. doi: 10.1364/OE.26.000870.

PMID:
29401966
17.

Broadband directional coupling in aluminum nitride nanophotonic circuits.

Stegmaier M, Pernice WH.

Opt Express. 2013 Mar 25;21(6):7304-15. doi: 10.1364/OE.21.007304.

PMID:
23546114
18.

A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride.

Ranacher C, Consani C, Tortschanoff A, Rauter L, Holzmann D, Fleury C, Stocker G, Fant A, Schaunig H, Irsigler P, Grille T, Jakoby B.

Sensors (Basel). 2019 May 31;19(11). pii: E2513. doi: 10.3390/s19112513.

19.

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

Rathi S, Lee IY, Park JH, Kim BJ, Kim HT, Kim GH.

ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19718-25. doi: 10.1021/am5046982. Epub 2014 Nov 7.

PMID:
25343172
20.

Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film.

Singh SP, Srivastava P, Ghosh S, Khan SA, Vijaya Prakash G.

J Phys Condens Matter. 2009 Mar 4;21(9):095010. doi: 10.1088/0953-8984/21/9/095010. Epub 2009 Feb 13.

PMID:
21817383

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