Similar articles for PMID: 31459467

Year	Number of Results
2002	1
2008	1
2009	2
2010	3
2011	2
2012	5
2013	9
2014	11
2015	10
2016	8
2017	16
2018	8
2019	15
2020	8
2021	4
2022	3
2023	1
2024	0

1

Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study.

Giambra MA, Benfante A, Pernice R, Miseikis V, Fabbri F, Reitz C, Pernice WHP, Krupke R, Calandra E, Stivala S, Busacca AC, Danneau R. Giambra MA, et al. ACS Omega. 2019 Jan 29;4(1):2256-2260. doi: 10.1021/acsomega.8b02836. eCollection 2019 Jan 31. ACS Omega. 2019. PMID: 31459467 Free PMC article.

2

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.

Guerriero E, Pedrinazzi P, Mansouri A, Habibpour O, Winters M, Rorsman N, Behnam A, Carrion EA, Pesquera A, Centeno A, Zurutuza A, Pop E, Zirath H, Sordan R. Guerriero E, et al. Sci Rep. 2017 May 25;7(1):2419. doi: 10.1038/s41598-017-02541-2. Sci Rep. 2017. PMID: 28546634 Free PMC article.

3

Interface Electrical Properties of Al₂O₃ Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

Fisichella G, Schilirò E, Di Franco S, Fiorenza P, Lo Nigro R, Roccaforte F, Ravesi S, Giannazzo F. Fisichella G, et al. ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7761-7771. doi: 10.1021/acsami.6b15190. Epub 2017 Feb 13. ACS Appl Mater Interfaces. 2017. PMID: 28135063

4

UV-Cured Hafnium Oxide-Based Gate Dielectrics for Low-Voltage Organic and Amorphous Oxide Thin-Film Transistors.

Byun HR, Ha YG. Byun HR, et al. J Nanosci Nanotechnol. 2019 Jul 1;19(7):4249-4253. doi: 10.1166/jnn.2019.16329. J Nanosci Nanotechnol. 2019. PMID: 30765000

5

Atomic-Layer-Deposition Growth of an Ultrathin HfO₂ Film on Graphene.

Xiao M, Qiu C, Zhang Z, Peng LM. Xiao M, et al. ACS Appl Mater Interfaces. 2017 Oct 4;9(39):34050-34056. doi: 10.1021/acsami.7b09408. Epub 2017 Sep 25. ACS Appl Mater Interfaces. 2017. PMID: 28901123

6

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Jeong SJ, et al. Sci Rep. 2016 Feb 10;6:20907. doi: 10.1038/srep20907. Sci Rep. 2016. PMID: 26861833 Free PMC article.

7

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors.

Lee Y, Jeon W, Cho Y, Lee MH, Jeong SJ, Park J, Park S. Lee Y, et al. ACS Nano. 2016 Jul 26;10(7):6659-66. doi: 10.1021/acsnano.6b01734. Epub 2016 Jul 1. ACS Nano. 2016. PMID: 27355098

8

High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.

Jo JW, Kim KH, Kim J, Ban SG, Kim YH, Park SK. Jo JW, et al. ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2679-2687. doi: 10.1021/acsami.7b10786. Epub 2018 Jan 8. ACS Appl Mater Interfaces. 2018. PMID: 29280381

9

Damage evaluation in graphene underlying atomic layer deposition dielectrics.

Tang X, Reckinger N, Poncelet O, Louette P, Ureña F, Idrissi H, Turner S, Cabosart D, Colomer JF, Raskin JP, Hackens B, Francis LA. Tang X, et al. Sci Rep. 2015 Aug 27;5:13523. doi: 10.1038/srep13523. Sci Rep. 2015. PMID: 26311131 Free PMC article.

10

Effect of Dielectric Interface on the Performance of MoS₂ Transistors.

Li X, Xiong X, Li T, Li S, Zhang Z, Wu Y. Li X, et al. ACS Appl Mater Interfaces. 2017 Dec 27;9(51):44602-44608. doi: 10.1021/acsami.7b14031. Epub 2017 Dec 14. ACS Appl Mater Interfaces. 2017. PMID: 29199423

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