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Items: 1 to 20 of 107

1.

Ultrathin Free-Standing Nanosheets of Bi2O2Se: Room Temperature Ferroelectricity in Self-Assembled Charged Layered Heterostructure.

Ghosh T, Samanta M, Vasdev A, Dolui K, Ghatak J, Das T, Sheet G, Biswas K.

Nano Lett. 2019 Aug 14;19(8):5703-5709. doi: 10.1021/acs.nanolett.9b02312. Epub 2019 Aug 1.

PMID:
31347854
2.

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility.

Wu M, Zeng XC.

Nano Lett. 2017 Oct 11;17(10):6309-6314. doi: 10.1021/acs.nanolett.7b03020. Epub 2017 Sep 26.

PMID:
28929772
3.

Critical thickness for ferroelectricity in perovskite ultrathin films.

Junquera J, Ghosez P.

Nature. 2003 Apr 3;422(6931):506-9.

PMID:
12673246
4.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit.

Wang H, Liu ZR, Yoong HY, Paudel TR, Xiao JX, Guo R, Lin WN, Yang P, Wang J, Chow GM, Venkatesan T, Tsymbal EY, Tian H, Chen JS.

Nat Commun. 2018 Aug 20;9(1):3319. doi: 10.1038/s41467-018-05662-y.

5.

Facile synthesis of ultrathin lepidocrocite nanosheets from layered precursors.

Yang Y, Zhong Y, Wang X, Ma Y, Yao J.

Chem Asian J. 2014 Jun;9(6):1563-9. doi: 10.1002/asia.201301704. Epub 2014 Apr 6.

PMID:
24706619
6.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Wu J, Yuan H, Meng M, Chen C, Sun Y, Chen Z, Dang W, Tan C, Liu Y, Yin J, Zhou Y, Huang S, Xu HQ, Cui Y, Hwang HY, Liu Z, Chen Y, Yan B, Peng H.

Nat Nanotechnol. 2017 Jul;12(6):530-534. doi: 10.1038/nnano.2017.43. Epub 2017 Apr 3.

PMID:
28369044
7.

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.

Liu F, You L, Seyler KL, Li X, Yu P, Lin J, Wang X, Zhou J, Wang H, He H, Pantelides ST, Zhou W, Sharma P, Xu X, Ajayan PM, Wang J, Liu Z.

Nat Commun. 2016 Aug 11;7:12357. doi: 10.1038/ncomms12357.

8.

First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films.

Lee SR, Baasandorj L, Chang JW, Hwang IW, Kim JR, Kim JG, Ko KT, Shim SB, Choi MW, You M, Yang CH, Kim J, Song J.

Nano Lett. 2019 Apr 10;19(4):2243-2250. doi: 10.1021/acs.nanolett.8b04326. Epub 2019 Mar 14.

PMID:
30860385
9.

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit.

Yuan S, Luo X, Chan HL, Xiao C, Dai Y, Xie M, Hao J.

Nat Commun. 2019 Apr 16;10(1):1775. doi: 10.1038/s41467-019-09669-x.

10.

Layer-by-layer assembly and spontaneous flocculation of oppositely charged oxide and hydroxide nanosheets into inorganic sandwich layered materials.

Li L, Ma R, Ebina Y, Fukuda K, Takada K, Sasaki T.

J Am Chem Soc. 2007 Jun 27;129(25):8000-7. Epub 2007 Jun 6.

PMID:
17550255
11.

Thickness scaling of ferroelectricity in BiFeO3 by tomographic atomic force microscopy.

Steffes JJ, Ristau RA, Ramesh R, Huey BD.

Proc Natl Acad Sci U S A. 2019 Feb 12;116(7):2413-2418. doi: 10.1073/pnas.1806074116. Epub 2019 Jan 25.

12.

First-principles theory, coarse-grained models, and simulations of ferroelectrics.

Waghmare UV.

Acc Chem Res. 2014 Nov 18;47(11):3242-9. doi: 10.1021/ar500331c. Epub 2014 Oct 31.

PMID:
25361389
13.

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

Chernikova A, Kozodaev M, Markeev A, Negrov D, Spiridonov M, Zarubin S, Bak O, Buragohain P, Lu H, Suvorova E, Gruverman A, Zenkevich A.

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7232-7. doi: 10.1021/acsami.5b11653. Epub 2016 Mar 14.

PMID:
26931409
14.

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se.

Chen C, Wang M, Wu J, Fu H, Yang H, Tian Z, Tu T, Peng H, Sun Y, Xu X, Jiang J, Schröter NBM, Li Y, Pei D, Liu S, Ekahana SA, Yuan H, Xue J, Li G, Jia J, Liu Z, Yan B, Peng H, Chen Y.

Sci Adv. 2018 Sep 14;4(9):eaat8355. doi: 10.1126/sciadv.aat8355. eCollection 2018 Sep.

15.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking.

Xiao J, Zhu H, Wang Y, Feng W, Hu Y, Dasgupta A, Han Y, Wang Y, Muller DA, Martin LW, Hu P, Zhang X.

Phys Rev Lett. 2018 Jun 1;120(22):227601. doi: 10.1103/PhysRevLett.120.227601.

PMID:
29906143
16.

CuInP₂S₆ Room Temperature Layered Ferroelectric.

Belianinov A, He Q, Dziaugys A, Maksymovych P, Eliseev E, Borisevich A, Morozovska A, Banys J, Vysochanskii Y, Kalinin SV.

Nano Lett. 2015 Jun 10;15(6):3808-14. doi: 10.1021/acs.nanolett.5b00491. Epub 2015 May 5.

PMID:
25932503
17.

Photogeneration and Mobility of Charge Carriers in Atomically Thin Colloidal InSe Nanosheets Probed by Ultrafast Terahertz Spectroscopy.

Lauth J, Kulkarni A, Spoor FCM, Renaud N, Grozema FC, Houtepen AJ, Schins JM, Kinge S, Siebbeles LDA.

J Phys Chem Lett. 2016 Oct 20;7(20):4191-4196. doi: 10.1021/acs.jpclett.6b01835. Epub 2016 Oct 10.

PMID:
27715056
18.

Ferroelectricity-Enhanced Piezo-Phototronic Effect in 2D V-Doped ZnO Nanosheets.

Dai Y, Wu C, Wu Z, Zhao Z, Li L, Lu Y, Wang ZL.

Adv Sci (Weinh). 2019 Jun 22;6(16):1900314. doi: 10.1002/advs.201900314. eCollection 2019 Aug 21.

19.

Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

Garcia V, Fusil S, Bouzehouane K, Enouz-Vedrenne S, Mathur ND, Barthélémy A, Bibes M.

Nature. 2009 Jul 2;460(7251):81-4. doi: 10.1038/nature08128. Epub 2009 May 31.

PMID:
19483675
20.

Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers.

Wan S, Li Y, Li W, Mao X, Zhu W, Zeng H.

Nanoscale. 2018 Aug 9;10(31):14885-14892. doi: 10.1039/c8nr04422h.

PMID:
30043785

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