Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 101

1.

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability.

Li Q, Bi S, Asare-Yeboah K, Na J, Liu Y, Jiang C, Song J.

ACS Nano. 2019 Jul 23;13(7):8425-8432. doi: 10.1021/acsnano.9b04163. Epub 2019 Jul 1.

PMID:
31247139
2.

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

Chen L, Cai F, Otuonye U, Lu WD.

Nano Lett. 2016 Jan 13;16(1):420-6. doi: 10.1021/acs.nanolett.5b04038. Epub 2015 Dec 21.

PMID:
26674542
3.

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires.

Tao Z, Huang YA, Liu X, Chen J, Lei W, Wang X, Pan L, Pan J, Huang Q, Zhang Z.

Nanomicro Lett. 2016;8(3):247-253. doi: 10.1007/s40820-016-0083-7. Epub 2016 Mar 5.

4.

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

Barreda JL, Keiper TD, Zhang M, Xiong P.

ACS Appl Mater Interfaces. 2017 Apr 5;9(13):12046-12053. doi: 10.1021/acsami.7b00144. Epub 2017 Mar 23.

PMID:
28274114
6.

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

Hosseini Shokouh SH, Raza SR, Lee HS, Im S.

Phys Chem Chem Phys. 2014 Aug 21;16(31):16367-72. doi: 10.1039/c4cp01266f.

PMID:
24985947
7.

Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS2.

Wu JY, Chun YT, Li S, Zhang T, Chu D.

ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24613-24619. doi: 10.1021/acsami.8b06078. Epub 2018 Jul 13.

PMID:
29972018
8.

Electrical behaviour of MEH-PPV based diode and transistor.

Reshak AH, Shahimin MM, Juhari N, Suppiah S.

Prog Biophys Mol Biol. 2013 Nov;113(2):289-94. doi: 10.1016/j.pbiomolbio.2013.09.002. Epub 2013 Sep 27. Review.

PMID:
24080185
9.

Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors.

Mohammad SN.

Nanotechnology. 2013 Nov 15;24(45):455201. doi: 10.1088/0957-4484/24/45/455201. Epub 2013 Oct 15.

PMID:
24129340
10.

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Burke AM, Carrad DJ, Gluschke JG, Storm K, Fahlvik Svensson S, Linke H, Samuelson L, Micolich AP.

Nano Lett. 2015 May 13;15(5):2836-43. doi: 10.1021/nl5043243. Epub 2015 Apr 21.

PMID:
25879492
11.

Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

Yu H, Dong Z, Guo J, Kim D, So F.

ACS Appl Mater Interfaces. 2016 Apr 27;8(16):10430-5. doi: 10.1021/acsami.6b00182. Epub 2016 Apr 15.

PMID:
27082815
12.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Swanwick ME, Pfaendler SM, Akinwande AI, Flewitt AJ.

Nanotechnology. 2012 Aug 31;23(34):344009. doi: 10.1088/0957-4484/23/34/344009. Epub 2012 Aug 10.

PMID:
22885284
13.

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.

Li XX, Fan ZQ, Liu PZ, Chen ML, Liu X, Jia CK, Sun DM, Jiang XW, Han Z, Bouchiat V, Guo JJ, Chen JH, Zhang ZD.

Nat Commun. 2017 Oct 17;8(1):970. doi: 10.1038/s41467-017-01128-9.

14.

High current, low voltage carbon nanotube enabled vertical organic field effect transistors.

McCarthy MA, Liu B, Rinzler AG.

Nano Lett. 2010 Sep 8;10(9):3467-72. doi: 10.1021/nl101589x.

PMID:
20707327
15.

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.

Van NH, Lee JH, Sohn JI, Cha S, Whang D, Kim JM, Kang DJ.

Nanotechnology. 2014 May 23;25(20):205201. doi: 10.1088/0957-4484/25/20/205201. Epub 2014 Apr 30.

PMID:
24784161
16.

Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires.

Lord AM, Ramasse QM, Kepaptsoglou DM, Periwal P, Ross FM, Wilks SP.

Nano Lett. 2017 Nov 8;17(11):6626-6636. doi: 10.1021/acs.nanolett.7b02561. Epub 2017 Oct 17.

17.

Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching.

Kim JS, Jeon PJ, Lee J, Choi K, Lee HS, Cho Y, Lee YT, Hwang DK, Im S.

Nano Lett. 2015 Sep 9;15(9):5778-83. doi: 10.1021/acs.nanolett.5b01746. Epub 2015 Aug 17.

PMID:
26274095
18.

Textile Display with AMOLED Using a Stacked-Pixel Structure on a Polyethylene Terephthalate Fabric Substrate.

Kim JS, Song CK.

Materials (Basel). 2019 Jun 22;12(12). pii: E2000. doi: 10.3390/ma12122000.

19.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

Hosseini Shokouh SH, Pezeshki A, Ali Raza SR, Choi K, Min SW, Jeon PJ, Lee HS, Im S.

ACS Nano. 2014 May 27;8(5):5174-81. doi: 10.1021/nn501230v. Epub 2014 Apr 21.

PMID:
24717126
20.

Simulation study on a new dual-material nanowire MOS surrounding-gate transistor.

Zhou W, Zhang L, Chen L, Xu Y, Wu W, He J.

J Nanosci Nanotechnol. 2011 Dec;11(12):11006-10.

PMID:
22409044

Supplemental Content

Support Center