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Items: 1 to 20 of 95

1.

High sensitivity Si-based photodetection with nanoscale protective layer based on interface states.

Dong A, Pei Z, Yuan J, Qian S, Tao J, Wang H.

Nanotechnology. 2019 Jun 18;30(37):375705. doi: 10.1088/1361-6528/ab2a88. [Epub ahead of print]

PMID:
31212264
2.

Magnetically tuned photoelectric response observed in nanoscale Co-SiO2-Si structures.

Zhang Q, Hu J, Zheng D, Dong A, Wang H.

Nanotechnology. 2017 Oct 27;28(43):435206. doi: 10.1088/1361-6528/aa85ff. Epub 2017 Aug 14.

PMID:
28805656
3.

Laser tuned large position-dependent tunneling detection dominated by interface states in silicon based oxide-semiconductor structure.

Dong A, Lu J, Liu S, Gan Z, Zhou P, Wang H.

Opt Express. 2019 Jan 21;27(2):743-752. doi: 10.1364/OE.27.000743.

PMID:
30696155
4.

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure.

Zhang K, Wang H, Gan Z, Zhou P, Mei C, Huang X, Xia Y.

Sci Rep. 2016 Mar 11;6:22906. doi: 10.1038/srep22906.

5.

Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: a first-principles study.

Jung HE, Shin M.

Nanotechnology. 2018 Jan 1;29(2):025201. doi: 10.1088/1361-6528/aa9a69.

PMID:
29134947
6.

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

Lu J, Tu X, Yin G, Wang H, He D.

Sci Rep. 2017 Nov 9;7(1):15221. doi: 10.1038/s41598-017-15556-6.

7.

H2 evolution at Si-based metal-insulator-semiconductor photoelectrodes enhanced by inversion channel charge collection and H spillover.

Esposito DV, Levin I, Moffat TP, Talin AA.

Nat Mater. 2013 Jun;12(6):562-8. doi: 10.1038/nmat3626. Epub 2013 May 5.

PMID:
23644521
8.

Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

Zheng F, Pham HH, Wang LW.

Phys Chem Chem Phys. 2017 Dec 13;19(48):32617-32625. doi: 10.1039/c7cp05879a.

9.

Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density.

Hiller D, Göttlicher J, Steininger R, Huthwelker T, Julin J, Munnik F, Wahl M, Bock W, Schoenaers B, Stesmans A, König D.

ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30495-30505. doi: 10.1021/acsami.8b06098. Epub 2018 Aug 27.

PMID:
30110151
10.

Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells.

Kim HS, Patel M, Park HH, Ray A, Jeong C, Kim J.

ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8662-9. doi: 10.1021/acsami.5b12732. Epub 2016 Mar 23.

PMID:
26971560
11.

Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions.

Qiao S, Zhang B, Feng K, Cong R, Yu W, Fu G, Wang S.

ACS Appl Mater Interfaces. 2017 May 31;9(21):18377-18387. doi: 10.1021/acsami.7b04638. Epub 2017 May 18.

PMID:
28492306
12.

Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells.

Jäckle S, Mattiza M, Liebhaber M, Brönstrup G, Rommel M, Lips K, Christiansen S.

Sci Rep. 2015 Aug 17;5:13008. doi: 10.1038/srep13008.

13.

Enhancing the electroluminescence efficiency of Si NC/SiO2 superlattice-based light-emitting diodes through hydrogen ion beam treatment.

Fu SW, Chen HJ, Wu HT, Chen SP, Shih CF.

Nanoscale. 2016 Apr 7;8(13):7155-62. doi: 10.1039/c5nr08470a.

PMID:
26965185
14.

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes.

Hendricks OL, Scheuermann AG, Schmidt M, Hurley PK, McIntyre PC, Chidsey CE.

ACS Appl Mater Interfaces. 2016 Sep 14;8(36):23763-73. doi: 10.1021/acsami.6b08558. Epub 2016 Sep 1.

PMID:
27548719
15.

High Performance Nanostructured Silicon-Organic Quasi p-n Junction Solar Cells via Low-Temperature Deposited Hole and Electron Selective Layer.

Liu Y, Zhang ZG, Xia Z, Zhang J, Liu Y, Liang F, Li Y, Song T, Yu X, Lee ST, Sun B.

ACS Nano. 2016 Jan 26;10(1):704-12. doi: 10.1021/acsnano.5b05732. Epub 2015 Dec 24.

PMID:
26695703
16.

The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

Cui H, Xu Y, Yang J, Tang N, Tang Z.

ScientificWorldJournal. 2013 Sep 30;2013:213091. doi: 10.1155/2013/213091. eCollection 2013.

17.

Band-bending at buried SiO2/Si interface as probed by XPS.

Çopuroğlu M, Sezen H, Opila RL, Suzer S.

ACS Appl Mater Interfaces. 2013 Jun 26;5(12):5875-81. doi: 10.1021/am401696e. Epub 2013 Jun 17.

PMID:
23772791
18.

Ultrahigh position sensitivity and fast optical relaxation time of lateral photovoltaic effect in Sb2Se3/p-Si junctions.

Zhang Y, Zhang Y, Yao T, Hu C, Sui Y, Wang X.

Opt Express. 2018 Dec 24;26(26):34214-34223. doi: 10.1364/OE.26.034214.

PMID:
30650852
19.

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

He J, Gao P, Ling Z, Ding L, Yang Z, Ye J, Cui Y.

ACS Nano. 2016 Dec 27;10(12):11525-11531. doi: 10.1021/acsnano.6b07511. Epub 2016 Dec 9.

PMID:
27935280
20.

Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO2 Nanowires.

Xing S, Lin L, Huo J, Zou G, Sheng X, Liu L, Zhou YN.

ACS Appl Mater Interfaces. 2019 Mar 6;11(9):9326-9332. doi: 10.1021/acsami.8b20860. Epub 2019 Feb 22.

PMID:
30757894

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