Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 102

1.

Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor.

Hou W, Azizimanesh A, Sewaket A, Peña T, Watson C, Liu M, Askari H, Wu SM.

Nat Nanotechnol. 2019 Jul;14(7):668-673. doi: 10.1038/s41565-019-0466-2. Epub 2019 Jun 10.

PMID:
31182837
2.

MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering.

Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ.

ACS Nano. 2019 Jul 2. doi: 10.1021/acsnano.9b02785. [Epub ahead of print]

PMID:
31247141
3.

Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors.

Fan ZQ, Jiang XW, Chen J, Luo JW.

ACS Appl Mater Interfaces. 2018 Jun 6;10(22):19271-19277. doi: 10.1021/acsami.8b04860. Epub 2018 May 22.

PMID:
29737827
4.

Monolayer Single-Crystal 1T'-MoTe2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect.

Naylor CH, Parkin WM, Ping J, Gao Z, Zhou YR, Kim Y, Streller F, Carpick RW, Rappe AM, Drndić M, Kikkawa JM, Johnson AT.

Nano Lett. 2016 Jul 13;16(7):4297-304. doi: 10.1021/acs.nanolett.6b01342. Epub 2016 Jun 20.

5.

van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo6Te6 Nanoplates/MoTe2 Atomic Layers with Low Schottky Barrier Height.

Lee RS, Kim D, Pawar SA, Kim T, Shin JC, Kang SW.

ACS Nano. 2019 Jan 22;13(1):642-648. doi: 10.1021/acsnano.8b07720. Epub 2019 Jan 11.

PMID:
30609346
6.

Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain.

Song S, Keum DH, Cho S, Perello D, Kim Y, Lee YH.

Nano Lett. 2016 Jan 13;16(1):188-93. doi: 10.1021/acs.nanolett.5b03481. Epub 2015 Dec 31.

PMID:
26713902
7.

Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers.

Chen J, Wang G, Tang Y, Tian H, Xu J, Dai X, Xu H, Jia J, Ho W, Xie M.

ACS Nano. 2017 Mar 28;11(3):3282-3288. doi: 10.1021/acsnano.7b00556. Epub 2017 Feb 27.

PMID:
28225590
8.

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Yang L, Zhang W, Li J, Cheng S, Xie Z, Chang H.

ACS Nano. 2017 Feb 28;11(2):1964-1972. doi: 10.1021/acsnano.6b08109. Epub 2017 Feb 13.

PMID:
28170218
9.

Controllable 2H-to-1T' phase transition in few-layer MoTe2.

Tan Y, Luo F, Zhu M, Xu X, Ye Y, Li B, Wang G, Luo W, Zheng X, Wu N, Yu Y, Qin S, Zhang XA.

Nanoscale. 2018 Nov 1;10(42):19964-19971. doi: 10.1039/c8nr06115g.

PMID:
30349910
10.

Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories.

Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J.

Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10.

PMID:
30542093
11.

Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe2 Films.

Empante TA, Zhou Y, Klee V, Nguyen AE, Lu IH, Valentin MD, Naghibi Alvillar SA, Preciado E, Berges AJ, Merida CS, Gomez M, Bobek S, Isarraraz M, Reed EJ, Bartels L.

ACS Nano. 2017 Jan 24;11(1):900-905. doi: 10.1021/acsnano.6b07499. Epub 2017 Jan 3.

PMID:
27992719
12.

Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization.

Huang JH, Hsu HH, Wang D, Lin WT, Cheng CC, Lee YJ, Hou TH.

Sci Rep. 2019 Jun 19;9(1):8810. doi: 10.1038/s41598-019-45142-x.

13.

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 via Solid-to-Solid Phase Transformation.

Xu X, Chen S, Liu S, Cheng X, Xu W, Li P, Wan Y, Yang S, Gong W, Yuan K, Gao P, Ye Y, Dai L.

J Am Chem Soc. 2019 Feb 6;141(5):2128-2134. doi: 10.1021/jacs.8b12230. Epub 2019 Jan 25.

PMID:
30633514
14.

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors.

Pezeshki A, Hosseini Shokouh SH, Jeon PJ, Shackery I, Kim JS, Oh IK, Jun SC, Kim H, Im S.

ACS Nano. 2016 Jan 26;10(1):1118-25. doi: 10.1021/acsnano.5b06419. Epub 2015 Dec 4.

PMID:
26631357
15.

Phase-Engineered Synthesis of Centimeter-Scale 1T'- and 2H-Molybdenum Ditelluride Thin Films.

Park JC, Yun SJ, Kim H, Park JH, Chae SH, An SJ, Kim JG, Kim SM, Kim KK, Lee YH.

ACS Nano. 2015 Jun 23;9(6):6548-54. doi: 10.1021/acsnano.5b02511. Epub 2015 Jun 11.

PMID:
26042796
16.

Engineering the Structural and Electronic Phases of MoTe2 through W Substitution.

Rhodes D, Chenet DA, Janicek BE, Nyby C, Lin Y, Jin W, Edelberg D, Mannebach E, Finney N, Antony A, Schiros T, Klarr T, Mazzoni A, Chin M, Chiu YC, Zheng W, Zhang QR, Ernst F, Dadap JI, Tong X, Ma J, Lou R, Wang S, Qian T, Ding H, Osgood RM Jr, Paley DW, Lindenberg AM, Huang PY, Pasupathy AN, Dubey M, Hone J, Balicas L.

Nano Lett. 2017 Mar 8;17(3):1616-1622. doi: 10.1021/acs.nanolett.6b04814. Epub 2017 Feb 6.

PMID:
28145719
17.

A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.

Chen K, Chen Z, Wan X, Zheng Z, Xie F, Chen W, Gui X, Chen H, Xie W, Xu J.

Adv Mater. 2017 Oct;29(38). doi: 10.1002/adma.201700704. Epub 2017 Aug 21.

PMID:
28833622
18.

In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering.

Yoo Y, DeGregorio ZP, Su Y, Koester SJ, Johns JE.

Adv Mater. 2017 Apr;29(16). doi: 10.1002/adma.201605461. Epub 2017 Feb 21.

PMID:
28221704
19.

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

Mulaosmanovic H, Ocker J, Müller S, Schroeder U, Müller J, Polakowski P, Flachowsky S, van Bentum R, Mikolajick T, Slesazeck S.

ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3792-3798. doi: 10.1021/acsami.6b13866. Epub 2017 Jan 24.

PMID:
28071052
20.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations.

Hong X.

J Phys Condens Matter. 2016 Mar 16;28(10):103003. doi: 10.1088/0953-8984/28/10/103003. Epub 2016 Feb 16.

PMID:
26881391

Supplemental Content

Support Center