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Items: 1 to 20 of 100

1.

Defect-Mediated Phase Transformation in Anisotropic Two-Dimensional PdSe2 Crystals for Seamless Electrical Contacts.

Oyedele AD, Yang S, Feng T, Haglund AV, Gu Y, Puretzky AA, Briggs D, Rouleau CM, Chisholm MF, Unocic RR, Mandrus D, Meyer HM 3rd, Pantelides ST, Geohegan DB, Xiao K.

J Am Chem Soc. 2019 Jun 5;141(22):8928-8936. doi: 10.1021/jacs.9b02593. Epub 2019 May 28.

PMID:
31090414
2.

Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires.

Lord AM, Ramasse QM, Kepaptsoglou DM, Periwal P, Ross FM, Wilks SP.

Nano Lett. 2017 Nov 8;17(11):6626-6636. doi: 10.1021/acs.nanolett.7b02561. Epub 2017 Oct 17.

3.

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

Oyedele AD, Yang S, Liang L, Puretzky AA, Wang K, Zhang J, Yu P, Pudasaini PR, Ghosh AW, Liu Z, Rouleau CM, Sumpter BG, Chisholm MF, Zhou W, Rack PD, Geohegan DB, Xiao K.

J Am Chem Soc. 2017 Oct 11;139(40):14090-14097. doi: 10.1021/jacs.7b04865. Epub 2017 Sep 26.

PMID:
28873294
4.

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes.

Huang YT, Chen YH, Ho YJ, Huang SW, Chang YR, Watanabe K, Taniguchi T, Chiu HC, Liang CT, Sankar R, Chou FC, Chen CW, Wang WH.

ACS Appl Mater Interfaces. 2018 Oct 3;10(39):33450-33456. doi: 10.1021/acsami.8b10576. Epub 2018 Sep 21.

PMID:
30191709
5.

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Kappera R, Voiry D, Yalcin SE, Branch B, Gupta G, Mohite AD, Chhowalla M.

Nat Mater. 2014 Dec;13(12):1128-34. doi: 10.1038/nmat4080. Epub 2014 Aug 31.

PMID:
25173581
6.

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors.

Wang Y, Kim JC, Wu RJ, Martinez J, Song X, Yang J, Zhao F, Mkhoyan A, Jeong HY, Chhowalla M.

Nature. 2019 Apr;568(7750):70-74. doi: 10.1038/s41586-019-1052-3. Epub 2019 Mar 27.

PMID:
30918403
7.

Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function.

Hajzus JR, Biacchi AJ, Le ST, Richter CA, Hight Walker AR, Porter LM.

Nanoscale. 2017 Dec 21;10(1):319-327. doi: 10.1039/c7nr07403d.

8.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Chuang HJ, Chamlagain B, Koehler M, Perera MM, Yan J, Mandrus D, Tománek D, Zhou Z.

Nano Lett. 2016 Mar 9;16(3):1896-902. doi: 10.1021/acs.nanolett.5b05066. Epub 2016 Feb 10.

PMID:
26844954
9.

Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.

Jang CO, Kim TH, Lee SY, Kim DJ, Lee SK.

Nanotechnology. 2008 Aug 27;19(34):345203. doi: 10.1088/0957-4484/19/34/345203. Epub 2008 Jul 15.

PMID:
21730641
10.

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors.

Chee SS, Seo D, Kim H, Jang H, Lee S, Moon SP, Lee KH, Kim SW, Choi H, Ham MH.

Adv Mater. 2019 Jan;31(2):e1804422. doi: 10.1002/adma.201804422. Epub 2018 Nov 9.

PMID:
30411825
11.

Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.

Yamaguchi H, Blancon JC, Kappera R, Lei S, Najmaei S, Mangum BD, Gupta G, Ajayan PM, Lou J, Chhowalla M, Crochet JJ, Mohite AD.

ACS Nano. 2015 Jan 27;9(1):840-9. doi: 10.1021/nn506469v. Epub 2015 Jan 5.

PMID:
25521210
12.

Atomic Structure and Dynamics of Defects and Grain Boundaries in 2D Pd2Se3 Monolayers.

Chen J, Ryu GH, Sinha S, Warner JH.

ACS Nano. 2019 Jun 26. doi: 10.1021/acsnano.9b03645. [Epub ahead of print]

PMID:
31241313
13.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

Simchi H, Cooley KA, Ding Z, Molina A, Mohney SE.

ACS Appl Mater Interfaces. 2018 May 16;10(19):16623-16627. doi: 10.1021/acsami.8b02933. Epub 2018 May 7.

PMID:
29668246
14.

Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering.

Kim Y, Kim AR, Yang JH, Chang KE, Kwon JD, Choi SY, Park J, Lee KE, Kim DH, Choi SM, Lee KH, Lee BH, Hahm MG, Cho B.

Nano Lett. 2016 Sep 14;16(9):5928-33. doi: 10.1021/acs.nanolett.6b02893. Epub 2016 Aug 25.

PMID:
27552187
15.

Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition.

Zhang X, Jin Z, Wang L, Hachtel JA, Villarreal E, Wang Z, Ha T, Nakanishi Y, Tiwary CS, Lai J, Dong L, Yang J, Vajtai R, Ringe E, Idrobo JC, Yakobson BI, Lou J, Gambin V, Koltun R, Ajayan PM.

ACS Appl Mater Interfaces. 2019 Apr 3;11(13):12777-12785. doi: 10.1021/acsami.9b00306. Epub 2019 Mar 21.

PMID:
30854848
16.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Chow WL, Yu P, Liu F, Hong J, Wang X, Zeng Q, Hsu CH, Zhu C, Zhou J, Wang X, Xia J, Yan J, Chen Y, Wu D, Yu T, Shen Z, Lin H, Jin C, Tay BK, Liu Z.

Adv Mater. 2017 Jun;29(21). doi: 10.1002/adma.201602969. Epub 2017 Apr 3.

PMID:
28370566
17.

Modified MXene: promising electrode materials for constructing Ohmic contacts with MoS2 for electronic device applications.

Zhao P, Jin H, Lv X, Huang B, Ma Y, Dai Y.

Phys Chem Chem Phys. 2018 Jun 20;20(24):16551-16557. doi: 10.1039/c8cp02300j.

PMID:
29872795
18.

General criterion to distinguish between Schottky and Ohmic contacts at the metal/two-dimensional semiconductor interface.

Chen Y, Li Y, Wu J, Duan W.

Nanoscale. 2017 Feb 2;9(5):2068-2073. doi: 10.1039/c6nr07937g.

PMID:
28116389
19.

High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts.

Dankert A, Langouche L, Kamalakar MV, Dash SP.

ACS Nano. 2014 Jan 28;8(1):476-82. doi: 10.1021/nn404961e. Epub 2014 Jan 8.

PMID:
24377305
20.

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.

Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV.

Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14.

PMID:
21233538

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