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Items: 1 to 20 of 135

1.

395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.

Li Y, Lan J, Wang W, Zheng Y, Xie W, Tang X, Kong D, Xia Y, Lan Z, Li R, He X, Li G.

Opt Express. 2019 Mar 4;27(5):7447-7457. doi: 10.1364/OE.27.007447.

PMID:
30876308
2.

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.

Lee CY, Tzou AJ, Lin BC, Lan YP, Chiu CH, Chi GC, Chen CH, Kuo HC, Lin RM, Chang CY.

Nanoscale Res Lett. 2014 Sep 16;9(1):505. doi: 10.1186/1556-276X-9-505. eCollection 2014.

3.

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates.

Wang W, Yang W, Gao F, Lin Y, Li G.

Sci Rep. 2015 Mar 23;5:9315. doi: 10.1038/srep09315.

4.

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Chang HM, Lai WC, Chen WS, Chang SJ.

Opt Express. 2015 Apr 6;23(7):A337-45. doi: 10.1364/OE.23.00A337.

PMID:
25968799
5.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.

Hu H, Zhou S, Liu X, Gao Y, Gui C, Liu S.

Sci Rep. 2017 Mar 15;7:44627. doi: 10.1038/srep44627.

6.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

He C, Zhao W, Zhang K, He L, Wu H, Liu N, Zhang S, Liu X, Chen Z.

ACS Appl Mater Interfaces. 2017 Dec 13;9(49):43386-43392. doi: 10.1021/acsami.7b14801. Epub 2017 Nov 30.

PMID:
29164860
7.

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H.

Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 6.

PMID:
25656795
8.

High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer.

Oh JT, Moon YT, Kang DS, Park CK, Han JW, Jung MH, Sung YJ, Jeong HH, Song JO, Seong TY.

Opt Express. 2018 Mar 5;26(5):5111-5117. doi: 10.1364/OE.26.005111.

PMID:
29529718
9.

Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications.

Tran BT, Maeda N, Jo M, Inoue D, Kikitsu T, Hirayama H.

Sci Rep. 2016 Nov 7;6:35681. doi: 10.1038/srep35681.

10.

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Horng RH, Wu BR, Tien CH, Ou SL, Yang MH, Kuo HC, Wuu DS.

Opt Express. 2014 Jan 13;22 Suppl 1:A179-87. doi: 10.1364/OE.22.00A179.

PMID:
24921994
11.

Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

Lee TH, Kim KH, Lee BR, Park JH, Schubert EF, Kim TG.

ACS Appl Mater Interfaces. 2016 Dec 28;8(51):35668-35677. doi: 10.1021/acsami.6b12767. Epub 2016 Dec 19.

PMID:
27990816
12.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Wang W, Wang H, Yang W, Zhu Y, Li G.

Sci Rep. 2016 Apr 22;6:24448. doi: 10.1038/srep24448.

13.

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures.

Growden TA, Zhang W, Brown ER, Storm DF, Meyer DJ, Berger PR.

Light Sci Appl. 2018 Feb 23;7:17150. doi: 10.1038/lsa.2017.150. eCollection 2018.

14.

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

Xu J, Zhang W, Peng M, Dai J, Chen C.

Opt Lett. 2018 Jun 1;43(11):2684-2687. doi: 10.1364/OL.43.002684.

PMID:
29856393
15.

A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.

Chen LC, Wang CK, Huang JB, Hong LS.

Nanotechnology. 2009 Feb 25;20(8):085303. doi: 10.1088/0957-4484/20/8/085303. Epub 2009 Feb 2.

PMID:
19417447
16.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

Kim KH, Lee TH, Kim TG.

ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24357-24364. doi: 10.1021/acsami.7b06362. Epub 2017 Jul 10.

PMID:
28671809
17.

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.

Hu H, Zhou S, Wan H, Liu X, Li N, Xu H.

Sci Rep. 2019 Mar 5;9(1):3447. doi: 10.1038/s41598-019-40120-9.

18.

Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.

Key D, Letts E, Tsou CW, Ji MH, Bakhtiary-Noodeh M, Detchprohm T, Shen SC, Dupuis R, Hashimoto T.

Materials (Basel). 2019 Jun 14;12(12). pii: E1925. doi: 10.3390/ma12121925.

19.

Very thin ITO/metal mesh hybrid films for a high-performance transparent conductive layer in GaN-based light-emitting diodes.

Min JH, Kwak HM, Kim K, Jeong WL, Lee DS.

Nanotechnology. 2017 Jan 27;28(4):045201. doi: 10.1088/1361-6528/28/4/045201. Epub 2016 Dec 15.

PMID:
27977418
20.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Chen Z, Zhang X, Dou Z, Wei T, Liu Z, Qi Y, Ci H, Wang Y, Li Y, Chang H, Yan J, Yang S, Zhang Y, Wang J, Gao P, Li J, Liu Z.

Adv Mater. 2018 Jul;30(30):e1801608. doi: 10.1002/adma.201801608. Epub 2018 Jun 8.

PMID:
29883036

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