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Items: 1 to 20 of 128

1.

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications.

Sheng J, Hong T, Kang D, Yi Y, Lim JH, Park JS.

ACS Appl Mater Interfaces. 2019 Apr 3;11(13):12683-12692. doi: 10.1021/acsami.9b02999. Epub 2019 Mar 20.

PMID:
30859809
2.

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.

Baek IH, Pyeon JJ, Han SH, Lee GY, Choi BJ, Han JH, Chung TM, Hwang CS, Kim SK.

ACS Appl Mater Interfaces. 2019 Apr 24;11(16):14892-14901. doi: 10.1021/acsami.9b03331. Epub 2019 Apr 15.

PMID:
30945837
3.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

Sheng J, Lee HJ, Oh S, Park JS.

ACS Appl Mater Interfaces. 2016 Dec 14;8(49):33821-33828. Epub 2016 Nov 30.

PMID:
27960372
4.

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.

Yoon SM, Seong NJ, Choi K, Seo GH, Shin WC.

ACS Appl Mater Interfaces. 2017 Jul 12;9(27):22676-22684. doi: 10.1021/acsami.7b04637. Epub 2017 Jun 27.

PMID:
28653825
5.

Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter.

Goh Y, Ahn J, Lee JR, Park WW, Ko Park SH, Jeon S.

ACS Appl Mater Interfaces. 2017 Oct 25;9(42):36962-36970. doi: 10.1021/acsami.7b08065. Epub 2017 Oct 16.

PMID:
28985054
6.

Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing.

Avis C, Hwang HR, Jang J.

ACS Appl Mater Interfaces. 2014 Jul 23;6(14):10941-5. doi: 10.1021/am501153w. Epub 2014 Jun 30.

PMID:
24877653
7.
8.

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications.

Sheng J, Park EJ, Shong B, Park JS.

ACS Appl Mater Interfaces. 2017 Jul 19;9(28):23934-23940. doi: 10.1021/acsami.7b04985. Epub 2017 Jul 5.

PMID:
28644010
9.

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.

Lestari AD, Noviyana I, Putri M, Heo YW, Lee HY.

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1686-1689. doi: 10.1166/jnn.2019.16251.

PMID:
30469246
10.

Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.

Chu HC, Shen YS, Hsieh CH, Huang JH, Wu YH.

ACS Appl Mater Interfaces. 2015 Jul 22;7(28):15129-37. doi: 10.1021/acsami.5b02941. Epub 2015 Jul 13.

PMID:
26148216
11.

Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor.

Lee SJ, Ko J, Nam KH, Kim T, Lee SH, Kim JH, Chae GS, Han H, Kim YS, Myoung JM.

ACS Appl Mater Interfaces. 2016 May 25;8(20):12894-900. doi: 10.1021/acsami.6b00950. Epub 2016 May 10.

PMID:
27120010
12.

Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics.

John RA, Nguyen AC, Chen Y, Shukla S, Chen S, Mathews N.

ACS Appl Mater Interfaces. 2016 Jan 20;8(2):1139-46. doi: 10.1021/acsami.5b08880. Epub 2016 Jan 7.

PMID:
26695104
13.

Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.

Tiwari N, Rajput M, John RA, Kulkarni MR, Nguyen AC, Mathews N.

ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30506-30513. doi: 10.1021/acsami.8b06956. Epub 2018 Aug 31.

PMID:
30129368
14.

Boosting Modulation of Oxide Semiconductors via Voltage-Based Ambi-Ionic Migration.

Lee H, Jung TS, Park JW, Kim HJ.

ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37216-37222. doi: 10.1021/acsami.8b11854. Epub 2018 Oct 18.

PMID:
30298732
15.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.

ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25850-25857. doi: 10.1021/acsami.7b13211. Epub 2017 Dec 13.

PMID:
29235839
17.

Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film Transistors.

Goh Y, Kim T, Yang JH, Choi JH, Hwang CS, Cho SH, Jeon S.

ACS Appl Mater Interfaces. 2017 Mar 22;9(11):9271-9279. doi: 10.1021/acsami.7b01533. Epub 2017 Mar 10.

PMID:
28252929
18.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

Lin YY, Hsu CC, Tseng MH, Shyue JJ, Tsai FY.

ACS Appl Mater Interfaces. 2015 Oct 14;7(40):22610-7. doi: 10.1021/acsami.5b07278. Epub 2015 Oct 5.

PMID:
26436832
19.

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

Kim HY, Jung EA, Mun G, Agbenyeke RE, Park BK, Park JS, Son SU, Jeon DJ, Park SK, Chung TM, Han JH.

ACS Appl Mater Interfaces. 2016 Oct 12;8(40):26924-26931. Epub 2016 Sep 27.

PMID:
27673338
20.

Fully transparent and rollable electronics.

Mativenga M, Geng D, Kim B, Jang J.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1578-85. doi: 10.1021/am506937s. Epub 2015 Jan 14.

PMID:
25526282

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