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Items: 1 to 20 of 105

1.

Nanoscale Ring-Shaped Conduction Channels with Memristive Behavior in BiFeO₃ Nanodots.

Li Z, Fan Z, Zhou G.

Nanomaterials (Basel). 2018 Dec 11;8(12). pii: E1031. doi: 10.3390/nano8121031.

2.

Fabrication of high-density BiFeO3 nanodot and anti-nanodot arrays by anodic alumina template-assisted ion beam etching.

Tian G, Zhao L, Lu Z, Yao J, Fan H, Fan Z, Li Z, Li P, Chen D, Zhang X, Qin M, Zeng M, Zhang Z, Dai J, Gao X, Liu JM.

Nanotechnology. 2016 Dec 2;27(48):485302. Epub 2016 Nov 7.

PMID:
27819797
3.

Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators.

You BK, Kim JM, Joe DJ, Yang K, Shin Y, Jung YS, Lee KJ.

ACS Nano. 2016 Oct 25;10(10):9478-9488. doi: 10.1021/acsnano.6b04578. Epub 2016 Oct 14.

PMID:
27718554
4.

Switching mechanism in Au nanodot-embedded Nb2O5 memristors.

Hota MK, Bera MK, Bera MK.

J Nanosci Nanotechnol. 2014 May;14(5):3538-44.

PMID:
24734584
5.

High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states.

Li Z, Wang Y, Tian G, Li P, Zhao L, Zhang F, Yao J, Fan H, Song X, Chen D, Fan Z, Qin M, Zeng M, Zhang Z, Lu X, Hu S, Lei C, Zhu Q, Li J, Gao X, Liu JM.

Sci Adv. 2017 Aug 18;3(8):e1700919. doi: 10.1126/sciadv.1700919. eCollection 2017 Aug.

6.

A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.

Geresdi A, Csontos M, Gubicza A, Halbritter A, Mihály G.

Nanoscale. 2014 Mar 7;6(5):2613-7. doi: 10.1039/c3nr05682a. Epub 2014 Jan 31.

PMID:
24481239
7.

Nanoscale resistive switching Schottky contacts on self-assembled Pt nanodots on SrTiO(3).

Lee H, Kim H, Van TN, Kim DW, Park JY.

ACS Appl Mater Interfaces. 2013 Nov 27;5(22):11668-72. doi: 10.1021/am4032086. Epub 2013 Nov 6.

PMID:
24152094
8.

Prominent electric properties of BiFeO₃ shells sputtered on ZnO-nanorod cores with LaNiO₃ buffer layers.

Chiu KC, Yang TH, Wu JM.

Nanotechnology. 2013 Jun 7;24(22):225602. doi: 10.1088/0957-4484/24/22/225602. Epub 2013 May 3.

PMID:
23644843
9.

Memristive biosensors under varying humidity conditions.

Puppo F, Dave A, Doucey MA, Sacchetto D, Baj-Rossi C, Leblebici Y, De Micheli G, Carrara S.

IEEE Trans Nanobioscience. 2014 Mar;13(1):19-30. doi: 10.1109/TNB.2013.2295517.

PMID:
24594511
10.

Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.

Zhou MX, Chen B, Sun HB, Wan JG, Li ZW, Liu JM, Song FQ, Wang GH.

Nanotechnology. 2013 Jun 7;24(22):225702. doi: 10.1088/0957-4484/24/22/225702. Epub 2013 May 1.

PMID:
23637078
11.

Conduction through 71° domain walls in BiFeO3 thin films.

Farokhipoor S, Noheda B.

Phys Rev Lett. 2011 Sep 16;107(12):127601. Epub 2011 Sep 14.

PMID:
22026801
12.

Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated via a Universal Nanopatterning Approach.

Tian G, Chen D, Fan H, Li P, Fan Z, Qin M, Zeng M, Dai J, Gao X, Liu JM.

ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37219-37226. doi: 10.1021/acsami.7b12605. Epub 2017 Oct 10.

PMID:
28960060
13.

The role of Bi vacancies in the electrical conduction of BiFeO₃: a first-principles approach.

Xu Q, Sobhan M, Yang Q, Anariba F, Ong KP, Wu P.

Dalton Trans. 2014 Jul 28;43(28):10787-93. doi: 10.1039/c4dt00468j.

PMID:
24879577
14.

Proton conduction in gramicidin A and in its dioxolane-linked dimer in different lipid bilayers.

Cukierman S, Quigley EP, Crumrine DS.

Biophys J. 1997 Nov;73(5):2489-502.

15.

Magnetoelectric Coupling in Well-Ordered Epitaxial BiFeO3/CoFe2O4/SrRuO3 Heterostructured Nanodot Array.

Tian G, Zhang F, Yao J, Fan H, Li P, Li Z, Song X, Zhang X, Qin M, Zeng M, Zhang Z, Yao J, Gao X, Liu J.

ACS Nano. 2016 Jan 26;10(1):1025-32. doi: 10.1021/acsnano.5b06339. Epub 2015 Dec 14.

PMID:
26651132
16.

Stochastic memristive devices for computing and neuromorphic applications.

Gaba S, Sheridan P, Zhou J, Choi S, Lu W.

Nanoscale. 2013 Jul 7;5(13):5872-8. doi: 10.1039/c3nr01176c. Epub 2013 May 22.

PMID:
23698627
17.

Gradual electroforming and memristive switching in Pt/CuO(x)/Si/Pt systems.

Wei LL, Shang DS, Sun JR, Lee SB, Sun ZG, Shen BG.

Nanotechnology. 2013 Aug 16;24(32):325202. doi: 10.1088/0957-4484/24/32/325202. Epub 2013 Jul 18.

PMID:
23867151
18.

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions.

Li Y, Sun XY, Xu CY, Cao J, Sun ZY, Zhen L.

Nanoscale. 2018 Dec 13;10(48):23080-23086. doi: 10.1039/c8nr05408h.

PMID:
30511714
19.

Nanoscale memristive radiofrequency switches.

Pi S, Ghadiri-Sadrabadi M, Bardin JC, Xia Q.

Nat Commun. 2015 Jun 25;6:7519. doi: 10.1038/ncomms8519.

PMID:
26108890
20.

Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.

Greco G, Fiorenza P, Iucolano F, Severino A, Giannazzo F, Roccaforte F.

ACS Appl Mater Interfaces. 2017 Oct 11;9(40):35383-35390. doi: 10.1021/acsami.7b08935. Epub 2017 Sep 26.

PMID:
28920438

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