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Items: 1 to 20 of 115

1.

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

Son KJ, Kim TK, Cha YJ, Oh SK, You SJ, Ryou JH, Kwak JS.

Adv Sci (Weinh). 2017 Dec 19;5(2):1700637. doi: 10.1002/advs.201700637. eCollection 2018 Feb.

2.

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.

Lai WC, Lin CN, Lai YC, Yu P, Chi GC, Chang SJ.

Opt Express. 2014 Mar 10;22 Suppl 2:A396-401. doi: 10.1364/OE.22.00A396.

PMID:
24922249
3.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

Choi CH, Han J, Park JS, Seong TY.

Opt Express. 2013 Nov 4;21(22):26774-9. doi: 10.1364/OE.21.026774.

PMID:
24216898
4.

Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

Lee TH, Kim KH, Lee BR, Park JH, Schubert EF, Kim TG.

ACS Appl Mater Interfaces. 2016 Dec 28;8(51):35668-35677. doi: 10.1021/acsami.6b12767. Epub 2016 Dec 19.

PMID:
27990816
5.

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

Xu J, Zhang W, Peng M, Dai J, Chen C.

Opt Lett. 2018 Jun 1;43(11):2684-2687. doi: 10.1364/OL.43.002684.

PMID:
29856393
6.

Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer.

Lee HK, Joo DH, Kim MS, Yu JS.

Nanoscale Res Lett. 2012 Aug 16;7(1):458. doi: 10.1186/1556-276X-7-458.

7.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

Yoon YJ, Chae SW, Kim BK, Park MJ, Kwak JS.

J Nanosci Nanotechnol. 2010 May;10(5):3254-9.

PMID:
20358934
8.

Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes.

Joo K, Jerng SK, Kim YS, Kim B, Moon S, Moon D, Lee GD, Song YK, Chun SH, Yoon E.

Nanotechnology. 2012 Oct 26;23(42):425302. doi: 10.1088/0957-4484/23/42/425302. Epub 2012 Oct 4.

PMID:
23036991
9.

Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.

Kim HD, Kim KH, Kim SJ, Kim TG.

Opt Express. 2015 Nov 2;23(22):28775-83. doi: 10.1364/OE.23.028775.

PMID:
26561146
10.

Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer.

Kim TK, Yoon YJ, Oh SK, Cha YJ, Hong IY, Cho MU, Hong CH, Choi HK, Kwak JS.

J Nanosci Nanotechnol. 2018 Sep 1;18(9):6106-6111. doi: 10.1166/jnn.2018.15603.

PMID:
29677751
11.

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.

Liu YJ, Huang CC, Chen TY, Hsu CS, Liou JK, Tsai TY, Liu WC.

Opt Express. 2011 Jul 18;19(15):14662-70. doi: 10.1364/OE.19.014662.

PMID:
21934828
12.

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

Chuang SH, Tsung CS, Chen CH, Ou SL, Horng RH, Lin CY, Wuu DS.

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2546-53. doi: 10.1021/am507481n. Epub 2015 Jan 23.

PMID:
25562635
13.

Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.

Ou SL, Wuu DS, Liu SP, Fu YC, Huang SC, Horng RH.

Opt Express. 2011 Aug 15;19(17):16244-51. doi: 10.1364/OE.19.016244.

PMID:
21934987
14.

Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.

Kim MJ, Kim TG.

ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5453-7. doi: 10.1021/acsami.5b12127. Epub 2016 Feb 17.

PMID:
26859604
15.

Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.

Luo Y, Bai Y, Han Y, Li H, Wang L, Wang J, Sun C, Hao Z, Xiong B.

Opt Express. 2016 May 16;24(10):A797-809. doi: 10.1364/OE.24.00A797.

PMID:
27409953
16.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

Kim KH, Lee TH, Kim TG.

ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24357-24364. doi: 10.1021/acsami.7b06362. Epub 2017 Jul 10.

PMID:
28671809
17.

Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs.

Liu X, Zhou S, Gao Y, Hu H, Liu Y, Gui C, Liu S.

Appl Opt. 2017 Dec 1;56(34):9502-9509. doi: 10.1364/AO.56.009502.

PMID:
29216064
18.
19.

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

Neplokh V, Messanvi A, Zhang H, Julien FH, Babichev A, Eymery J, Durand C, Tchernycheva M.

Nanoscale Res Lett. 2015 Dec;10(1):447. doi: 10.1186/s11671-015-1143-5. Epub 2015 Nov 17.

20.

Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

Wang L, Cheng Y, Liu Z, Yi X, Zhu H, Wang G.

ACS Appl Mater Interfaces. 2016 Jan 20;8(2):1176-83. doi: 10.1021/acsami.5b09419. Epub 2016 Jan 7.

PMID:
26699194

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