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Items: 1 to 20 of 392

1.

Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2-WSe2 van der Waals Heterojunction-Based Field-Effect Transistors.

Son SB, Kim Y, Kim A, Cho B, Hong WK.

ACS Appl Mater Interfaces. 2017 Nov 29;9(47):41537-41545. doi: 10.1021/acsami.7b11983. Epub 2017 Nov 14.

PMID:
29110451
2.

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

Khan MA, Rathi S, Lee C, Lim D, Kim Y, Yun SJ, Youn DH, Kim GH.

ACS Appl Mater Interfaces. 2018 Jul 18;10(28):23961-23967. doi: 10.1021/acsami.8b05549. Epub 2018 Jul 3.

PMID:
29938500
3.

Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering.

Kim Y, Kim AR, Yang JH, Chang KE, Kwon JD, Choi SY, Park J, Lee KE, Kim DH, Choi SM, Lee KH, Lee BH, Hahm MG, Cho B.

Nano Lett. 2016 Sep 14;16(9):5928-33. doi: 10.1021/acs.nanolett.6b02893. Epub 2016 Aug 25.

PMID:
27552187
4.

Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions.

Wang B, Yang S, Wang C, Wu M, Huang L, Liu Q, Jiang C.

Nanoscale. 2017 Aug 3;9(30):10733-10740. doi: 10.1039/c7nr03445h.

PMID:
28715037
5.

Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor.

Yamamoto M, Nouchi R, Kanki T, Hattori AN, Watanabe K, Taniguchi T, Ueno K, Tanaka H.

ACS Appl Mater Interfaces. 2019 Jan 23;11(3):3224-3230. doi: 10.1021/acsami.8b18745. Epub 2019 Jan 11.

PMID:
30604604
6.

Gate tunable WSe2-BP van der Waals heterojunction devices.

Chen P, Zhang TT, zhang J, Xiang J, Yu H, Wu S, Lu X, Wang G, Wen F, Liu Z, Yang R, Shi D, Zhang G.

Nanoscale. 2016 Feb 14;8(6):3254-8. doi: 10.1039/c5nr09218c. Epub 2016 Jan 26.

PMID:
26810387
7.

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors.

Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K.

Nano Lett. 2019 Mar 13;19(3):1976-1981. doi: 10.1021/acs.nanolett.8b05159. Epub 2019 Feb 21.

PMID:
30779591
8.

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Lin YC, Li J, de la Barrera SC, Eichfeld SM, Nie Y, Addou R, Mende PC, Wallace RM, Cho K, Feenstra RM, Robinson JA.

Nanoscale. 2016 Apr 28;8(16):8947-54. doi: 10.1039/c6nr01902a.

PMID:
27073972
9.

Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS2 van der Waals Heterojunctions.

Yang S, Wu M, Wang B, Zhao LD, Huang L, Jiang C, Wei SH.

ACS Appl Mater Interfaces. 2017 Dec 6;9(48):42149-42155. doi: 10.1021/acsami.7b15288. Epub 2017 Nov 21.

PMID:
29134796
10.

Synthesis of 2D Layered BiI3 Nanoplates, BiI3 /WSe2 van der Waals Heterostructures and Their Electronic, Optoelectronic Properties.

Li J, Guan X, Wang C, Cheng HC, Ai R, Yao K, Chen P, Zhang Z, Duan X, Duan X.

Small. 2017 Oct;13(38). doi: 10.1002/smll.201701034. Epub 2017 Aug 9.

PMID:
28791794
11.

Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Lv X, Wei W, Zhao P, Li J, Huang B, Dai Y.

Phys Chem Chem Phys. 2018 Jan 17;20(3):1897-1903. doi: 10.1039/c7cp07546d.

PMID:
29296994
12.

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.

Shin YS, Lee K, Kim YR, Lee H, Lee IM, Kang WT, Lee BH, Kim K, Heo J, Park S, Lee YH, Yu WJ.

Adv Mater. 2018 Mar;30(9). doi: 10.1002/adma.201704435. Epub 2018 Jan 15.

PMID:
29333683
13.

Photoresponse of Natural van der Waals Heterostructures.

Ray K, Yore AE, Mou T, Jha S, Smithe KKH, Wang B, Pop E, Newaz AKM.

ACS Nano. 2017 Jun 27;11(6):6024-6030. doi: 10.1021/acsnano.7b01918. Epub 2017 May 16.

PMID:
28485958
14.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

Wang C, Yang S, Xiong W, Xia C, Cai H, Chen B, Wang X, Zhang X, Wei Z, Tongay S, Li J, Liu Q.

Phys Chem Chem Phys. 2016 Oct 12;18(40):27750-27753.

PMID:
27711489
15.

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A.

ACS Nano. 2015 Feb 24;9(2):2071-9. doi: 10.1021/nn507278b. Epub 2015 Jan 26.

PMID:
25598307
16.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

Li D, Wang B, Chen M, Zhou J, Zhang Z.

Small. 2017 Jun;13(21). doi: 10.1002/smll.201603726. Epub 2017 Apr 6.

PMID:
28383160
17.

Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.

Cheng R, Li D, Zhou H, Wang C, Yin A, Jiang S, Liu Y, Chen Y, Huang Y, Duan X.

Nano Lett. 2014 Oct 8;14(10):5590-7. doi: 10.1021/nl502075n. Epub 2014 Sep 8.

18.

Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors.

Shin J, Cho K, Kim TY, Pak J, Kim JK, Lee W, Kim J, Chung S, Hong WK, Lee T.

Nanoscale. 2019 Aug 7;11(29):13961-13967. doi: 10.1039/c9nr03345a. Epub 2019 Jul 15.

PMID:
31305825
19.

Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction.

Lan C, Li C, Wang S, He T, Jiao T, Wei D, Jing W, Li L, Liu Y.

ACS Appl Mater Interfaces. 2016 Jul 20;8(28):18375-82. doi: 10.1021/acsami.6b05109. Epub 2016 Jul 7.

PMID:
27351271
20.

Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid.

Park CJ, Park HJ, Lee JY, Kim J, Lee CH, Joo J.

ACS Appl Mater Interfaces. 2018 Sep 5;10(35):29848-29856. doi: 10.1021/acsami.8b11559. Epub 2018 Aug 22.

PMID:
30091581

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