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Items: 1 to 20 of 176

1.

Nonuniform Composition Profiles in Amorphous Multimetal Oxide Thin Films Deposited from Aqueous Solution.

Woods KN, Thomas MC, Mitchson G, Ditto J, Xu C, Kayal D, Frisella KC, Gustafsson T, Garfunkel E, Chabal YJ, Johnson DC, Page CJ.

ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37476-37483. doi: 10.1021/acsami.7b12462. Epub 2017 Oct 12.

PMID:
28959877
2.

High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

Woods KN, Chiang TH, Plassmeyer PN, Kast MG, Lygo AC, Grealish AK, Boettcher SW, Page CJ.

ACS Appl Mater Interfaces. 2017 Mar 29;9(12):10897-10903. doi: 10.1021/acsami.7b00915. Epub 2017 Mar 14.

PMID:
28262013
3.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

Plassmeyer PN, Archila K, Wager JF, Page CJ.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1678-84. doi: 10.1021/am507271e. Epub 2015 Jan 12.

PMID:
25532438
4.

Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions.

Fairley KC, Merrill DR, Woods KN, Ditto J, Xu C, Oleksak RP, Gustafsson T, Johnson DW, Garfunkel EL, Herman GS, Johnson DC, Page CJ.

ACS Appl Mater Interfaces. 2016 Jan 13;8(1):667-72. doi: 10.1021/acsami.5b09692. Epub 2015 Dec 30.

PMID:
26671578
5.

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor.

Cho JH, Lee SI, Kim JH, Yim SJ, Shin HS, Han MJ, Chae WM, Lee SD, Ahn CY, Kim MW.

J Nanosci Nanotechnol. 2015 Jan;15(1):382-5.

PMID:
26328365
6.

Solution-deposited organic-inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors.

Ha YG, Emery JD, Bedzyk MJ, Usta H, Facchetti A, Marks TJ.

J Am Chem Soc. 2011 Jul 6;133(26):10239-50. doi: 10.1021/ja202755x. Epub 2011 Jun 10.

PMID:
21609017
7.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

Choi YJ, Lim H, Lee S, Suh S, Kim JR, Jung HS, Park S, Lee JH, Kim SG, Hwang CS, Kim H.

ACS Appl Mater Interfaces. 2014 May 28;6(10):7885-94. doi: 10.1021/am5012172. Epub 2014 Apr 29.

PMID:
24780393
8.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

Park JH, Oh JY, Han SW, Lee TI, Baik HK.

ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4494-503. doi: 10.1021/acsami.5b00036. Epub 2015 Feb 19.

PMID:
25664940
9.

Hybrid gate dielectric materials for unconventional electronic circuitry.

Ha YG, Everaerts K, Hersam MC, Marks TJ.

Acc Chem Res. 2014 Apr 15;47(4):1019-28. doi: 10.1021/ar4002262. Epub 2014 Jan 15.

PMID:
24428627
10.
11.

Aqueous Chemical Solution Deposition of Novel, Thick and Dense Lattice-Matched Single Buffer Layers Suitable for YBCO Coated Conductors: Preparation and Characterization.

Narayanan V, van Steenberge S, Lommens P, van Driessche I.

Nanomaterials (Basel). 2012 Sep 10;2(3):298-311. doi: 10.3390/nano2030298.

12.

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

Zhuang J, Sun QJ, Zhou Y, Han ST, Zhou L, Yan Y, Peng H, Venkatesh S, Wu W, Li RK, Roy VA.

ACS Appl Mater Interfaces. 2016 Nov 16;8(45):31128-31135. Epub 2016 Nov 1.

PMID:
27762140
13.

Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode.

Ahn JH, Kwon SH.

ACS Appl Mater Interfaces. 2015 Jul 22;7(28):15587-92. doi: 10.1021/acsami.5b04303. Epub 2015 Jul 9.

PMID:
26125098
14.

Improving yield and performance in ZnO thin-film transistors made using selective area deposition.

Nelson SF, Ellinger CR, Levy DH.

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2754-9. doi: 10.1021/am5077638. Epub 2015 Jan 20.

PMID:
25562441
15.

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.

J Am Chem Soc. 2010 Sep 1;132(34):11934-42. doi: 10.1021/ja9103155.

PMID:
20698566
16.

Dielectric and Ferroelectric Performance of Pb(Zr(x)Ti(1-x))O3 Thin Films with Compositional Gradients.

He G, Zhou Y, Peng C, Zhang Y, Pan W.

J Nanosci Nanotechnol. 2015 Sep;15(9):7099-103.

PMID:
26716290
17.

Use of a ruthenium-containing conjugated polymer as a photosensitizer in photovoltaic devices fabricated by a layer-by-layer deposition process.

Man KY, Wong HL, Chan WK, Djurisić AB, Beach E, Rozeveld S.

Langmuir. 2006 Mar 28;22(7):3368-75.

PMID:
16548603
18.

Conductive and transparent multilayer films for low-temperature TiO2/Ag/SiO2 electrodes by E-beam evaporation with IAD.

Chiu PK, Lee CT, Chiang D, Cho WH, Hsiao CN, Chen YY, Huang BM, Yang JR.

Nanoscale Res Lett. 2014 Jan 16;9(1):35. doi: 10.1186/1556-276X-9-35.

19.

Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

Jo SH, Lee SG, Lee YH.

Nanoscale Res Lett. 2012 Jan 5;7:54. doi: 10.1186/1556-276X-7-54.

20.

Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

Branquinho R, Salgueiro D, Santos L, Barquinha P, Pereira L, Martins R, Fortunato E.

ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19592-9. doi: 10.1021/am503872t. Epub 2014 Nov 13.

PMID:
25354332

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