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Items: 1 to 20 of 173

1.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Hu S, Fang Z, Ning H, Tao R, Liu X, Zeng Y, Yao R, Huang F, Li Z, Xu M, Wang L, Lan L, Peng J.

Materials (Basel). 2016 Jul 27;9(8). pii: E623. doi: 10.3390/ma9080623.

2.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Hu S, Ning H, Lu K, Fang Z, Li Y, Yao R, Xu M, Wang L, Peng J, Lu X.

Nanomaterials (Basel). 2018 Mar 27;8(4). pii: E197. doi: 10.3390/nano8040197.

3.

The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

Park S, Bang S, Lee S, Park J, Ko Y, Jeon H.

J Nanosci Nanotechnol. 2011 Jul;11(7):6029-33.

PMID:
22121652
4.
5.

Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD.

Sheng J, Hong T, Lee HM, Kim K, Sasase M, Kim J, Hosono H, Park JS.

ACS Appl Mater Interfaces. 2019 Oct 30;11(43):40300-40309. doi: 10.1021/acsami.9b14310. Epub 2019 Oct 17.

PMID:
31584254
6.

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Luo D, Xu H, Zhao M, Li M, Xu M, Zou J, Tao H, Wang L, Peng J.

ACS Appl Mater Interfaces. 2015 Feb 18;7(6):3633-40. doi: 10.1021/am5079682. Epub 2015 Feb 4.

PMID:
25619280
7.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

Zhang J, Yang J, Li Y, Wilson J, Ma X, Xin Q, Song A.

Materials (Basel). 2017 Mar 21;10(3). pii: E319. doi: 10.3390/ma10030319.

8.

Improvement of On/Off Current Ratio of Amorphous In-Ga-Zn-O Thin-Film Transistor with Off-Planed Source/Drain Electrodes.

Kang MS, Cho WJ.

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1345-1349. doi: 10.1166/jnn.2019.16189.

PMID:
30469186
9.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

Fan CL, Shang MC, Li BJ, Lin YZ, Wang SJ, Lee WD.

Materials (Basel). 2014 Aug 11;7(8):5761-5768. doi: 10.3390/ma7085761.

10.

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

Secor EB, Smith J, Marks TJ, Hersam MC.

ACS Appl Mater Interfaces. 2016 Jul 13;8(27):17428-34. doi: 10.1021/acsami.6b02730. Epub 2016 Jun 28.

PMID:
27327555
11.

Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.

Na JW, Kim HJ, Hong S, Kim HJ.

ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37207-37215. doi: 10.1021/acsami.8b11094. Epub 2018 Oct 19.

PMID:
30338976
12.

Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition.

Wu CH, Chang KM, Chen YM, Huang BW, Zhang YX, Wang SJ, Hsu JM.

J Nanosci Nanotechnol. 2018 Mar 1;18(3):2054-2057. doi: 10.1166/jnn.2018.14977.

PMID:
29448711
13.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Ning H, Chen J, Fang Z, Tao R, Cai W, Yao R, Hu S, Zhu Z, Zhou Y, Yang C, Peng J.

Materials (Basel). 2017 Jan 10;10(1). pii: E51. doi: 10.3390/ma10010051.

14.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.

ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25850-25857. doi: 10.1021/acsami.7b13211. Epub 2017 Dec 13.

PMID:
29235839
15.
16.

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Shin KY, Tak YJ, Kim WG, Hong S, Kim HJ.

ACS Appl Mater Interfaces. 2017 Apr 19;9(15):13278-13285. doi: 10.1021/acsami.7b00257. Epub 2017 Apr 4.

PMID:
28299924
17.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

Lee H, Chang KS, Tak YJ, Jung TS, Park JW, Kim WG, Chung J, Jeong CB, Kim HJ.

Sci Rep. 2016 Oct 11;6:35044. doi: 10.1038/srep35044.

18.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Heo JS, Jo JW, Kang J, Jeong CY, Jeong HY, Kim SK, Kim K, Kwon HI, Kim J, Kim YH, Kim MG, Park SK.

ACS Appl Mater Interfaces. 2016 Apr 27;8(16):10403-12. doi: 10.1021/acsami.5b12819. Epub 2016 Apr 12.

PMID:
27035796
19.

The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.

Wu CH, Chang KM, Chen YM, Zhang YX, Cheng CY.

J Nanosci Nanotechnol. 2019 Apr 1;19(4):2189-2192. doi: 10.1166/jnn.2019.15996.

PMID:
30486965
20.

Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.

ACS Appl Mater Interfaces. 2013 Nov 27;5(22):11884-93. doi: 10.1021/am403585n. Epub 2013 Nov 18.

PMID:
24187917

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