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Items: 1 to 20 of 114


Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

Chien CY, Wu WH, You YH, Lin JH, Lee CY, Hsu WC, Kuan CH, Lin RM.

Nanoscale Res Lett. 2017 Dec;12(1):420. doi: 10.1186/s11671-017-2189-3. Epub 2017 Jun 17.


An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

Roccaforte F, Greco G, Fiorenza P, Iucolano F.

Materials (Basel). 2019 May 15;12(10). pii: E1599. doi: 10.3390/ma12101599. Review.


An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.

Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, Yan B, Xu R, Li Y.

Micromachines (Basel). 2018 Aug 10;9(8). pii: E396. doi: 10.3390/mi9080396.


DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Hong S, Rana Au, Heo JW, Kim HS.

J Nanosci Nanotechnol. 2015 Oct;15(10):7467-71.


a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

Song W, Wang R, Wang X, Guo D, Chen H, Zhu Y, Liu L, Zhou Y, Sun Q, Wang L, Li S.

ACS Appl Mater Interfaces. 2017 Nov 29;9(47):41435-41442. doi: 10.1021/acsami.7b12986. Epub 2017 Nov 15.


Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs.

Martínez PJ, Maset E, Martín-Holgado P, Morilla Y, Gilabert D, Sanchis-Kilders E.

Materials (Basel). 2019 Aug 28;12(17). pii: E2760. doi: 10.3390/ma12172760.


Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.

Cui P, Lv Y, Fu C, Liu H, Cheng A, Luan C, Zhou Y, Lin Z.

Sci Rep. 2018 Aug 27;8(1):12850. doi: 10.1038/s41598-018-31313-9.


Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

Bagnall KR, Moore EA, Badescu SC, Zhang L, Wang EN.

Rev Sci Instrum. 2017 Nov;88(11):113111. doi: 10.1063/1.5010225.


Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.

Jung JH, Yoon YJ, Cho MS, Kim BG, Jang WD, Kang IM.

J Nanosci Nanotechnol. 2019 Oct 1;19(10):6008-6015. doi: 10.1166/jnn.2019.17011.


AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Liu XY, Zhao SX, Zhang LQ, Huang HF, Shi JS, Zhang CM, Lu HL, Wang PF, Zhang DW.

Nanoscale Res Lett. 2015 Mar 4;10:109. doi: 10.1186/s11671-015-0802-x. eCollection 2015.


Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors.

Zhong Y, Su S, Zhou Y, Gao H, Chen X, He J, Zhan X, Sun Q, Yang H.

ACS Appl Mater Interfaces. 2019 Jun 19;11(24):21982-21987. doi: 10.1021/acsami.9b03130. Epub 2019 Jun 5.


High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

Dong Y, Son DH, Dai Q, Lee JH, Won CH, Kim JG, Chen D, Lee JH, Lu H, Zhang R, Zheng Y.

Sensors (Basel). 2018 Apr 24;18(5). pii: E1314. doi: 10.3390/s18051314.


Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

Chu BH, Kang BS, Hung SC, Chen KH, Ren F, Sciullo A, Gila BP, Pearton SJ.

J Diabetes Sci Technol. 2010 Jan 1;4(1):171-9.


Investigation on the I⁻V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.

Mao S, Xu Y.

Micromachines (Basel). 2018 Nov 5;9(11). pii: E571. doi: 10.3390/mi9110571.


High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Lee YJ, Yao YC, Huang CY, Lin TY, Cheng LL, Liu CY, Wang MT, Hwang JM.

Nanoscale Res Lett. 2014 Aug 27;9(1):433. doi: 10.1186/1556-276X-9-433. eCollection 2014.


Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device.

Huang X, Fang R, Yang C, Fu K, Fu H, Chen H, Yang TH, Zhou J, Montes J, Kozicki M, Barnaby H, Zhang B, Zhao Y.

Nanotechnology. 2019 May 24;30(21):215201. doi: 10.1088/1361-6528/ab0484. Epub 2019 Feb 5.


Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.

Heo JW, Kim YJ, Kim HS.

J Nanosci Nanotechnol. 2014 Dec;14(12):9436-42.


Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

Oh SK, Song CG, Jang T, Kim KC, Jo YJ, Kwak JS.

J Nanosci Nanotechnol. 2013 Mar;13(3):1738-40.


Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Chang TH, Xiong K, Park SH, Yuan G, Ma Z, Han J.

Sci Rep. 2017 Jul 25;7(1):6360. doi: 10.1038/s41598-017-06957-8.

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