Similar articles for PMID: 28241595

Year	Number of Results
1980	1
1981	1
1985	2
1986	5
1987	2
1988	1
1989	5
1990	6
1991	2
1992	4
1993	5
1994	2
1995	4
1996	5
2003	1
2004	1
2006	1
2007	2
2008	2
2009	3
2010	3
2011	7
2012	5
2013	8
2014	15
2015	14
2016	8
2017	14
2018	15
2019	16
2020	19
2021	17
2022	18
2023	6
2024	0

1

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Kowsz SJ, et al. Opt Express. 2017 Feb 20;25(4):3841-3849. doi: 10.1364/OE.25.003841. Opt Express. 2017. PMID: 28241595 Free article.

2

Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates.

Poyiatzis N, Athanasiou M, Bai J, Gong Y, Wang T. Poyiatzis N, et al. Sci Rep. 2019 Feb 4;9(1):1383. doi: 10.1038/s41598-018-37008-5. Sci Rep. 2019. PMID: 30718528 Free PMC article.

3

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.

Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Zhao H, et al. Opt Express. 2011 Jul 4;19 Suppl 4:A991-A1007. doi: 10.1364/OE.19.00A991. Opt Express. 2011. PMID: 21747571 Free article.

4

Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra.

Lee K, Choi I, Lee CR, Chung TH, Kim YS, Jeong KU, Chung DC, Kim JS. Lee K, et al. Sci Rep. 2017 Aug 2;7(1):7164. doi: 10.1038/s41598-017-07808-2. Sci Rep. 2017. PMID: 28769103 Free PMC article.

5

Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate.

Li H, Li P, Zhang H, Chow YC, Wong MS, Pinna S, Klamkin J, Speck JS, Nakamura S, DenBaars SP. Li H, et al. Opt Express. 2020 Apr 27;28(9):13569-13575. doi: 10.1364/OE.384139. Opt Express. 2020. PMID: 32403828 Free article.

6

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array.

Tu CG, Liao CH, Yao YF, Chen HS, Lin CH, Su CY, Shih PY, Chen WH, Zhu E, Kiang YW, Yang CC. Tu CG, et al. Opt Express. 2014 Dec 15;22 Suppl 7:A1799-809. doi: 10.1364/OE.22.0A1799. Opt Express. 2014. PMID: 25607494 Free article.

7

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Chen CY, Hsieh C, Liao CH, Chung WL, Chen HT, Cao W, Chang WM, Chen HS, Yao YF, Ting SY, Kiang YW, Yang CC, Hu X. Chen CY, et al. Opt Express. 2012 May 7;20(10):11321-35. doi: 10.1364/OE.20.011321. Opt Express. 2012. PMID: 22565753 Free article.

8

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Riley JR, et al. Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12. Nano Lett. 2013. PMID: 23919559

9

Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes.

Li P, Li H, Yao Y, Qwah KS, Iza M, Speck JS, Nakamura S, DenBaars SP. Li P, et al. Opt Express. 2023 Feb 27;31(5):7572-7578. doi: 10.1364/OE.480393. Opt Express. 2023. PMID: 36859886 Free article.

10

Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array.

Chen HS, Yao YF, Liao CH, Tu CG, Su CY, Chang WM, Kiang YW, Yang CC. Chen HS, et al. Opt Lett. 2013 Sep 1;38(17):3370-3. doi: 10.1364/OL.38.003370. Opt Lett. 2013. PMID: 23988960

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Results by year

Text availability

Article attribute

Article type

Publication date

216 results

Results by year