Similar articles for PMID: 27232340

Year	Number of Results
2012	1
2013	3
2014	11
2015	23
2016	16
2017	5
2018	2
2019	6
2020	4
2021	4
2022	5
2024	0

1

Large Work Function Modulation of Monolayer MoS2 by Ambient Gases.

Lee SY, Kim UJ, Chung J, Nam H, Jeong HY, Han GH, Kim H, Oh HM, Lee H, Kim H, Roh YG, Kim J, Hwang SW, Park Y, Lee YH. Lee SY, et al. ACS Nano. 2016 Jun 28;10(6):6100-7. doi: 10.1021/acsnano.6b01742. Epub 2016 May 31. ACS Nano. 2016. PMID: 27232340

2

Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures.

Li Y, Xu CY, Wang JY, Zhen L. Li Y, et al. Sci Rep. 2014 Nov 26;4:7186. doi: 10.1038/srep07186. Sci Rep. 2014. PMID: 25424301 Free PMC article.

3

Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.

Heine T. Heine T. Acc Chem Res. 2015 Jan 20;48(1):65-72. doi: 10.1021/ar500277z. Epub 2014 Dec 9. Acc Chem Res. 2015. PMID: 25489917

4

Layer number dependence of MoS2 photoconductivity using photocurrent spectral atomic force microscopic imaging.

Son Y, Wang QH, Paulson JA, Shih CJ, Rajan AG, Tvrdy K, Kim S, Alfeeli B, Braatz RD, Strano MS. Son Y, et al. ACS Nano. 2015 Mar 24;9(3):2843-55. doi: 10.1021/nn506924j. Epub 2015 Mar 4. ACS Nano. 2015. PMID: 25704152

5

Electrical and photo-electrical properties of MoS₂ nanosheets with and without an Al₂O₃ capping layer under various environmental conditions.

Khan MF, Nazir G, Lermolenko VM, Eom J. Khan MF, et al. Sci Technol Adv Mater. 2016 Apr 8;17(1):166-176. doi: 10.1080/14686996.2016.1167571. eCollection 2016. Sci Technol Adv Mater. 2016. PMID: 27877867 Free PMC article.

6

Lateral monolayer MoS₂ homojunction devices prepared by nitrogen plasma doping.

Lu J, Guo Z, Wang W, Lu J, Hu Y, Wang J, Xiao Y, Wang X, Wang S, Zhou Y, Zeng X. Lu J, et al. Nanotechnology. 2021 Jan 1;32(1):015701. doi: 10.1088/1361-6528/abb970. Nanotechnology. 2021. PMID: 32942263

7

Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS₂ Field-Effect Transistors.

Moon BH, Han GH, Kim H, Choi H, Bae JJ, Kim J, Jin Y, Jeong HY, Joo MK, Lee YH, Lim SC. Moon BH, et al. ACS Appl Mater Interfaces. 2017 Mar 29;9(12):11240-11246. doi: 10.1021/acsami.6b16692. Epub 2017 Mar 20. ACS Appl Mater Interfaces. 2017. PMID: 28266221

8

Single-layer MoS2 electronics.

Lembke D, Bertolazzi S, Kis A. Lembke D, et al. Acc Chem Res. 2015 Jan 20;48(1):100-10. doi: 10.1021/ar500274q. Epub 2015 Jan 2. Acc Chem Res. 2015. PMID: 25555202 Free article.

9

Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.

Miwa JA, Dendzik M, Grønborg SS, Bianchi M, Lauritsen JV, Hofmann P, Ulstrup S. Miwa JA, et al. ACS Nano. 2015 Jun 23;9(6):6502-10. doi: 10.1021/acsnano.5b02345. Epub 2015 Jun 10. ACS Nano. 2015. PMID: 26039108

10

MoS2 Heterojunctions by Thickness Modulation.

Tosun M, Fu D, Desai SB, Ko C, Kang JS, Lien DH, Najmzadeh M, Tongay S, Wu J, Javey A. Tosun M, et al. Sci Rep. 2015 Jun 30;5:10990. doi: 10.1038/srep10990. Sci Rep. 2015. PMID: 26121940 Free PMC article.

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