Similar articles for PMID: 26373884

Year	Number of Results
1991	1
2007	1
2012	1
2013	5
2014	30
2015	77
2016	73
2017	68
2018	60
2019	60
2020	63
2021	40
2022	48
2023	15
2024	0

1

Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.

Chen K, Wan X, Wen J, Xie W, Kang Z, Zeng X, Chen H, Xu JB. Chen K, et al. ACS Nano. 2015 Oct 27;9(10):9868-76. doi: 10.1021/acsnano.5b03188. Epub 2015 Sep 21. ACS Nano. 2015. PMID: 26373884

2

Controllable one-step growth of bilayer MoS₂-WS₂/WS₂ heterostructures by chemical vapor deposition.

Zhang X, Xiao S, Nan H, Mo H, Wan X, Gu X, Ostrikov KK. Zhang X, et al. Nanotechnology. 2018 Nov 9;29(45):455707. doi: 10.1088/1361-6528/aaddc5. Epub 2018 Aug 30. Nanotechnology. 2018. PMID: 30160236

3

Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.

Lv R, Robinson JA, Schaak RE, Sun D, Sun Y, Mallouk TE, Terrones M. Lv R, et al. Acc Chem Res. 2015 Jan 20;48(1):56-64. doi: 10.1021/ar5002846. Epub 2014 Dec 9. Acc Chem Res. 2015. PMID: 25490673

4

Seed Crystal Homogeneity Controls Lateral and Vertical Heteroepitaxy of Monolayer MoS2 and WS2.

Yoo Y, Degregorio ZP, Johns JE. Yoo Y, et al. J Am Chem Soc. 2015 Nov 18;137(45):14281-7. doi: 10.1021/jacs.5b06643. Epub 2015 Nov 5. J Am Chem Soc. 2015. PMID: 26488069

5

Controllable epitaxial growth of MoSe₂-MoS₂ lateral heterostructures with tunable electrostatic properties.

Chen T, Hao G, Kou L, Wang C, Zhong J. Chen T, et al. Nanotechnology. 2018 Nov 30;29(48):484003. doi: 10.1088/1361-6528/aae0cf. Epub 2018 Sep 12. Nanotechnology. 2018. PMID: 30207548

6

Electronic Structure of Quasi-Freestanding WS₂/MoS₂ Heterostructures.

Pielić B, Novko D, Rakić IŠ, Cai J, Petrović M, Ohmann R, Vujičić N, Basletić M, Busse C, Kralj M. Pielić B, et al. ACS Appl Mater Interfaces. 2021 Oct 27;13(42):50552-50563. doi: 10.1021/acsami.1c15412. Epub 2021 Oct 18. ACS Appl Mater Interfaces. 2021. PMID: 34661383

7

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures.

Wei W, Dai Y, Huang B. Wei W, et al. Phys Chem Chem Phys. 2016 Jun 21;18(23):15632-8. doi: 10.1039/c6cp02741e. Epub 2016 May 25. Phys Chem Chem Phys. 2016. PMID: 27220413

8

Controllable Epitaxial Growth of Large-Area MoS₂ /WS₂ Vertical Heterostructures by Confined-Space Chemical Vapor Deposition.

Zhang X, Huangfu L, Gu Z, Xiao S, Zhou J, Nan H, Gu X, Ostrikov KK. Zhang X, et al. Small. 2021 May;17(18):e2007312. doi: 10.1002/smll.202007312. Epub 2021 Mar 18. Small. 2021. PMID: 33733558

9

Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.

Chen K, Wan X, Xie W, Wen J, Kang Z, Zeng X, Chen H, Xu J. Chen K, et al. Adv Mater. 2015 Nov 4;27(41):6431-7. doi: 10.1002/adma.201502375. Epub 2015 Sep 23. Adv Mater. 2015. PMID: 26398227

10

NaCl-assisted one-step growth of MoS₂-WS₂ in-plane heterostructures.

Wang Z, Xie Y, Wang H, Wu R, Nan T, Zhan Y, Sun J, Jiang T, Zhao Y, Lei Y, Yang M, Wang W, Zhu Q, Ma X, Hao Y. Wang Z, et al. Nanotechnology. 2017 Aug 11;28(32):325602. doi: 10.1088/1361-6528/aa6f01. Nanotechnology. 2017. PMID: 28718451

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