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Items: 1 to 20 of 173

1.

Hybridization effects on the out-of-plane electron tunneling properties of monolayers: is h-BN more conductive than graphene?

Zhong X, Amorim RG, Rocha AR, Pandey R.

Nanotechnology. 2014 Aug 29;25(34):345703. doi: 10.1088/0957-4484/25/34/345703. Epub 2014 Aug 7.

PMID:
25101928
2.

Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a zigzag boundary.

Liu M, Li Y, Chen P, Sun J, Ma D, Li Q, Gao T, Gao Y, Cheng Z, Qiu X, Fang Y, Zhang Y, Liu Z.

Nano Lett. 2014 Nov 12;14(11):6342-7. doi: 10.1021/nl502780u. Epub 2014 Oct 8.

PMID:
25268563
3.

Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures.

Yan Z, Chen L, Yoon M, Kumar S.

Nanoscale. 2016 Feb 21;8(7):4037-46. doi: 10.1039/c5nr06818e.

PMID:
26817419
4.

Electron tunneling through ultrathin boron nitride crystalline barriers.

Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Katsnelson MI, Eaves L, Morozov SV, Mayorov AS, Peres NM, Neto AH, Leist J, Geim AK, Ponomarenko LA, Novoselov KS.

Nano Lett. 2012 Mar 14;12(3):1707-10. doi: 10.1021/nl3002205. Epub 2012 Mar 1.

PMID:
22380756
5.

Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride.

Zhong X, Amorim RG, Scheicher RH, Pandey R, Karna SP.

Nanoscale. 2012 Sep 7;4(17):5490-8. doi: 10.1039/c2nr31310c. Epub 2012 Aug 2.

PMID:
22854975
6.

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.

Jung S, Park M, Park J, Jeong TY, Kim HJ, Watanabe K, Taniguchi T, Ha DH, Hwang C, Kim YS.

Sci Rep. 2015 Nov 13;5:16642. doi: 10.1038/srep16642.

7.

Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties.

Li Q, Liu M, Zhang Y, Liu Z.

Small. 2016 Jan 6;12(1):32-50. doi: 10.1002/smll.201501766. Epub 2015 Oct 6.

PMID:
26439677
8.

Toward single-layer uniform hexagonal boron nitride-graphene patchworks with zigzag linking edges.

Gao Y, Zhang Y, Chen P, Li Y, Liu M, Gao T, Ma D, Chen Y, Cheng Z, Qiu X, Duan W, Liu Z.

Nano Lett. 2013 Jul 10;13(7):3439-43. doi: 10.1021/nl4021123. Epub 2013 Jun 14.

PMID:
23758663
9.

Thermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.

Liu Y, Ong ZY, Wu J, Zhao Y, Watanabe K, Taniguchi T, Chi D, Zhang G, Thong JT, Qiu CW, Hippalgaonkar K.

Sci Rep. 2017 Mar 6;7:43886. doi: 10.1038/srep43886.

10.

Nano-structured interface of graphene and h-BN for sensing applications.

de Souza FA, Amorim RG, Scopel WL, Scheicher RH.

Nanotechnology. 2016 Sep 9;27(36):365503. doi: 10.1088/0957-4484/27/36/365503. Epub 2016 Aug 3.

PMID:
27485857
11.

Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures.

Guo H, Liu Y, Xu Y, Meng N, Wang H, Hasan T, Wang X, Luo J, Yu B.

Nanotechnology. 2014 Sep 5;25(35):355202. doi: 10.1088/0957-4484/25/35/355202. Epub 2014 Aug 12.

PMID:
25116064
12.

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes.

Liu Z, Ma L, Shi G, Zhou W, Gong Y, Lei S, Yang X, Zhang J, Yu J, Hackenberg KP, Babakhani A, Idrobo JC, Vajtai R, Lou J, Ajayan PM.

Nat Nanotechnol. 2013 Feb;8(2):119-24. doi: 10.1038/nnano.2012.256. Epub 2013 Jan 27.

PMID:
23353677
13.

Dipolar polarization and piezoelectricity of a hexagonal boron nitride sheet decorated with hydrogen and fluorine.

Noor-A-Alam M, Kim HJ, Shin YH.

Phys Chem Chem Phys. 2014 Apr 14;16(14):6575-82. doi: 10.1039/c3cp53971g. Epub 2014 Feb 26.

PMID:
24569610
14.

Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Dresselhaus M, Palacios T, Kong J.

ACS Nano. 2012 Oct 23;6(10):8583-90. doi: 10.1021/nn301675f. Epub 2012 Sep 20.

PMID:
22970651
15.

Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111).

Roth S, Matsui F, Greber T, Osterwalder J.

Nano Lett. 2013 Jun 12;13(6):2668-75. doi: 10.1021/nl400815w. Epub 2013 May 14.

PMID:
23656509
16.

Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.

Shin HC, Jang Y, Kim TH, Lee JH, Oh DH, Ahn SJ, Lee JH, Moon Y, Park JH, Yoo SJ, Park CY, Whang D, Yang CW, Ahn JR.

J Am Chem Soc. 2015 Jun 3;137(21):6897-905. doi: 10.1021/jacs.5b03151. Epub 2015 May 22.

PMID:
25973636
17.

Electronic states at the graphene-hexagonal boron nitride zigzag interface.

Drost R, Uppstu A, Schulz F, Hämäläinen SK, Ervasti M, Harju A, Liljeroth P.

Nano Lett. 2014 Sep 10;14(9):5128-32. doi: 10.1021/nl501895h. Epub 2014 Aug 5.

PMID:
25078791
18.

Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier.

Jung S, Myoung N, Park J, Jeong TY, Kim H, Watanabe K, Taniguchi T, Ha DH, Hwang C, Park HC.

Nano Lett. 2017 Jan 11;17(1):206-213. doi: 10.1021/acs.nanolett.6b03821. Epub 2016 Dec 27.

PMID:
28005378
19.

Direct growth of graphene/hexagonal boron nitride stacked layers.

Liu Z, Song L, Zhao S, Huang J, Ma L, Zhang J, Lou J, Ajayan PM.

Nano Lett. 2011 May 11;11(5):2032-7. doi: 10.1021/nl200464j. Epub 2011 Apr 13.

PMID:
21488689
20.

Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges.

Liu L, Park J, Siegel DA, McCarty KF, Clark KW, Deng W, Basile L, Idrobo JC, Li AP, Gu G.

Science. 2014 Jan 10;343(6167):163-7. doi: 10.1126/science.1246137.

PMID:
24408431

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