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Items: 1 to 20 of 169

1.

Strain dynamics of ultrathin VO₂ film grown on TiO₂ (001) and the associated phase transition modulation.

Fan LL, Chen S, Luo ZL, Liu QH, Wu YF, Song L, Ji DX, Wang P, Chu WS, Gao C, Zou CW, Wu ZY.

Nano Lett. 2014 Jul 9;14(7):4036-43. doi: 10.1021/nl501480f. Epub 2014 Jun 25. Erratum in: Nano Lett. 2014 Sep 10;14(9):5478.

PMID:
24956434
2.

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

Fan LL, Chen S, Liao GM, Chen YL, Ren H, Zou CW.

J Phys Condens Matter. 2016 Jun 29;28(25):255002. doi: 10.1088/0953-8984/28/25/255002. Epub 2016 May 11.

PMID:
27168422
3.

Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition.

Yang M, Yang Y, Hong B, Wang L, Hu K, Dong Y, Xu H, Huang H, Zhao J, Chen H, Song L, Ju H, Zhu J, Bao J, Li X, Gu Y, Yang T, Gao X, Luo Z, Gao C.

Sci Rep. 2016 Mar 15;6:23119. doi: 10.1038/srep23119.

4.

Control of the metal-insulator transition in VO₂ epitaxial film by modifying carrier density.

Chen FH, Fan LL, Chen S, Liao GM, Chen YL, Wu P, Song L, Zou CW, Wu ZY.

ACS Appl Mater Interfaces. 2015 Apr 1;7(12):6875-81. doi: 10.1021/acsami.5b00540. Epub 2015 Mar 18.

PMID:
25751594
5.

Orbital change manipulation metal-insulator transition temperature in W-doped VO2.

He X, Zeng Y, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J.

Phys Chem Chem Phys. 2015 May 7;17(17):11638-46. doi: 10.1039/c4cp04889j.

PMID:
25866849
6.

Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.

Asayesh-Ardakani H, Nie A, Marley PM, Zhu Y, Phillips PJ, Singh S, Mashayek F, Sambandamurthy G, Low KB, Klie RF, Banerjee S, Odegard GM, Shahbazian-Yassar R.

Nano Lett. 2015 Nov 11;15(11):7179-88. doi: 10.1021/acs.nanolett.5b03219. Epub 2015 Oct 16.

PMID:
26457771
7.

Continuous Tuning of Phase Transition Temperature in VO2 Thin Films on c-Cut Sapphire Substrates via Strain Variation.

Jian J, Wang X, Li L, Fan M, Zhang W, Huang J, Qi Z, Wang H.

ACS Appl Mater Interfaces. 2017 Feb 15;9(6):5319-5327. doi: 10.1021/acsami.6b13217. Epub 2017 Feb 3.

PMID:
28098965
8.

Interfacial-strain-induced structural and polarization evolutions in epitaxial multiferroic BiFeO3 (001) thin films.

Guo H, Zhao R, Jin KJ, Gu L, Xiao D, Yang Z, Li X, Wang L, He X, Gu J, Wan Q, Wang C, Lu H, Ge C, He M, Yang G.

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2944-51. doi: 10.1021/am508511y. Epub 2015 Jan 23.

PMID:
25580936
9.

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

Zhang Z, Guo H, Ding W, Zhang B, Lu Y, Ke X, Liu W, Chen F, Sui M.

Nano Lett. 2017 Feb 8;17(2):851-855. doi: 10.1021/acs.nanolett.6b04118. Epub 2017 Jan 17.

PMID:
28080071
10.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

Breckenfeld E, Kim H, Burgess K, Charipar N, Cheng SF, Stroud R, Piqué A.

ACS Appl Mater Interfaces. 2017 Jan 18;9(2):1577-1584. doi: 10.1021/acsami.6b13112. Epub 2017 Jan 6.

PMID:
27997109
11.

Electrically controlled metal-insulator transition process in VO2 thin films.

Zhao Y, Hao J, Chen C, Fan Z.

J Phys Condens Matter. 2012 Jan 25;24(3):035601. doi: 10.1088/0953-8984/24/3/035601. Epub 2011 Dec 19.

PMID:
22179437
12.

Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

Kim MW, Ha SS, Seo O, Noh do Y, Kim BJ.

Nano Lett. 2016 Jul 13;16(7):4074-81. doi: 10.1021/acs.nanolett.6b00719. Epub 2016 Jun 6.

PMID:
27253750
13.

Comparison Studies of Interfacial Electronic and Energetic Properties of LaAlO3/TiO2 and TiO2/LaAlO3 Heterostructures from First-Principles Calculations.

Cheng J, Luo J, Yang K.

ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7682-7690. doi: 10.1021/acsami.6b12254. Epub 2017 Feb 13.

PMID:
28139115
14.

Inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2.

O'Callahan BT, Jones AC, Hyung Park J, Cobden DH, Atkin JM, Raschke MB.

Nat Commun. 2015 Apr 21;6:6849. doi: 10.1038/ncomms7849.

PMID:
25897640
15.

Nano-optical investigations of the metal-insulator phase behavior of individual VO(2) microcrystals.

Jones AC, Berweger S, Wei J, Cobden D, Raschke MB.

Nano Lett. 2010 May 12;10(5):1574-81. doi: 10.1021/nl903765h.

PMID:
20377237
16.

Metallization of vanadium dioxide driven by large phonon entropy.

Budai JD, Hong J, Manley ME, Specht ED, Li CW, Tischler JZ, Abernathy DL, Said AH, Leu BM, Boatner LA, McQueeney RJ, Delaire O.

Nature. 2014 Nov 27;515(7528):535-9. doi: 10.1038/nature13865. Epub 2014 Nov 10.

PMID:
25383524
17.

Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films.

Wang L, Chang L, Yin X, Rusydi A, You L, Zhou Y, Fang L, Wang J.

J Phys Condens Matter. 2017 Jan 18;29(2):025002. Epub 2016 Nov 15.

PMID:
27845934
18.

Calculation Evidence of Staged Mott and Peierls Transitions in VO2 Revealed by Mapping Reduced-Dimension Potential Energy Surface.

Chen S, Liu J, Luo H, Gao Y.

J Phys Chem Lett. 2015 Sep 17;6(18):3650-6. doi: 10.1021/acs.jpclett.5b01376. Epub 2015 Sep 4.

PMID:
26722737
19.

Effects of nonequilibrium growth, nonstoichiometry, and film orientation on the metal-to-insulator transition in NdNiO₃ thin films.

Breckenfeld E, Chen Z, Damodaran AR, Martin LW.

ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22436-44. doi: 10.1021/am506436s. Epub 2014 Dec 2.

PMID:
25454898
20.

Ultrathin TiO(x) films on Pt(111): a LEED, XPS, and STM investigation.

Sedona F, Rizzi GA, Agnoli S, Llabrés i Xamena FX, Papageorgiou A, Ostermann D, Sambi M, Finetti P, Schierbaum K, Granozzi G.

J Phys Chem B. 2005 Dec 29;109(51):24411-26.

PMID:
16375442

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