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Items: 1 to 20 of 152

1.

Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.

Lin CC, Wu YH, Chang YT, Sun CE.

Nanoscale Res Lett. 2014 May 30;9(1):275. doi: 10.1186/1556-276X-9-275. eCollection 2014.

2.

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

Zhang L, Zhu L, Li X, Xu Z, Wang W, Bai X.

Sci Rep. 2017 Mar 21;7:45143. doi: 10.1038/srep45143.

3.

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M.

Nanoscale. 2013 Jun 7;5(11):4785-9. doi: 10.1039/c3nr33370a. Epub 2013 Apr 23.

PMID:
23612603
4.

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.

Oh SI, Rani JR, Hong SM, Jang JH.

Nanoscale. 2017 Oct 19;9(40):15314-15322. doi: 10.1039/c7nr01840a.

PMID:
28820212
5.

Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.

Park SP, Tak YJ, Kim HJ, Lee JH, Yoo H, Kim HJ.

Adv Mater. 2018 May 15:e1800722. doi: 10.1002/adma.201800722. [Epub ahead of print]

PMID:
29761552
6.

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

Wang LG, Cao ZY, Qian X, Zhu L, Cui DP, Li AD, Wu D.

ACS Appl Mater Interfaces. 2017 Feb 22;9(7):6634-6643. doi: 10.1021/acsami.6b16098. Epub 2017 Feb 10.

PMID:
28139921
7.

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.

Gao S, Zeng F, Li F, Wang M, Mao H, Wang G, Song C, Pan F.

Nanoscale. 2015 Apr 14;7(14):6031-8. doi: 10.1039/c4nr06406b.

PMID:
25765948
8.
9.

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.

Lin YD, Chen PS, Lee HY, Chen YS, Rahaman SZ, Tsai KH, Hsu CH, Chen WS, Wang PH, King YC, Lin CJ.

Nanoscale Res Lett. 2017 Dec;12(1):407. doi: 10.1186/s11671-017-2179-5. Epub 2017 Jun 13.

10.

Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device.

Liang L, Li K, Xiao C, Fan S, Liu J, Zhang W, Xu W, Tong W, Liao J, Zhou Y, Ye B, Xie Y.

J Am Chem Soc. 2015 Mar 4;137(8):3102-8. doi: 10.1021/jacs.5b00021. Epub 2015 Feb 19.

PMID:
25668153
11.

Flexible Nanoporous WO3-x Nonvolatile Memory Device.

Ji Y, Yang Y, Lee SK, Ruan G, Kim TW, Fei H, Lee SH, Kim DY, Yoon J, Tour JM.

ACS Nano. 2016 Aug 23;10(8):7598-603. doi: 10.1021/acsnano.6b02711. Epub 2016 Aug 9.

PMID:
27482761
12.

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Kim S, Park BG.

Nanoscale Res Lett. 2016 Dec;11(1):360. doi: 10.1186/s11671-016-1572-9. Epub 2016 Aug 12.

13.

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M.

Nanoscale Res Lett. 2015 Feb 5;10:39. doi: 10.1186/s11671-014-0721-2. eCollection 2015.

14.

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.

Maikap S, Jana D, Dutta M, Prakash A.

Nanoscale Res Lett. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292. eCollection 2014.

15.

Conductance Quantization in Resistive Random Access Memory.

Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M.

Nanoscale Res Lett. 2015 Dec;10(1):420. doi: 10.1186/s11671-015-1118-6. Epub 2015 Oct 26.

16.

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.

Rahaman SZ, Lin YD, Lee HY, Chen YS, Chen PS, Chen WS, Hsu CH, Tsai KH, Tsai MJ, Wang PH.

Langmuir. 2017 May 16;33(19):4654-4665. doi: 10.1021/acs.langmuir.7b00479. Epub 2017 May 1.

PMID:
28420238
17.

Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Simanjuntak FM, Panda D, Wei KH, Tseng TY.

Nanoscale Res Lett. 2016 Dec;11(1):368. doi: 10.1186/s11671-016-1570-y. Epub 2016 Aug 19. Review.

18.

1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor.

Lee KJ, Chang YC, Lee CJ, Wang LW, Wang YH.

Materials (Basel). 2017 Dec 9;10(12). pii: E1408. doi: 10.3390/ma10121408.

19.

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack.

Ma H, Feng J, Lv H, Gao T, Xu X, Luo Q, Gong T, Yuan P.

Nanoscale Res Lett. 2017 Dec;12(1):118. doi: 10.1186/s11671-017-1905-3. Epub 2017 Feb 15.

20.

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Kim S, Chang YF, Kim MH, Kim TH, Kim Y, Park BG.

Materials (Basel). 2017 Apr 26;10(5). pii: E459. doi: 10.3390/ma10050459.

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