Similar articles for PMID: 24921994

Year	Number of Results
1987	1
1988	1
1992	1
1993	1
1994	1
1995	4
1996	4
2000	1
2002	1
2003	4
2005	3
2006	1
2007	2
2008	8
2009	6
2010	12
2011	16
2012	20
2013	20
2014	61
2015	59
2016	40
2017	32
2018	25
2019	35
2020	32
2021	28
2022	20
2023	3
2024	0

1

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Horng RH, Wu BR, Tien CH, Ou SL, Yang MH, Kuo HC, Wuu DS. Horng RH, et al. Opt Express. 2014 Jan 13;22 Suppl 1:A179-87. doi: 10.1364/OE.22.00A179. Opt Express. 2014. PMID: 24921994 Free article.

2

Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.

Lau KM, Wong KM, Zou X, Chen P. Lau KM, et al. Opt Express. 2011 Jul 4;19 Suppl 4:A956-61. doi: 10.1364/OE.19.00A956. Opt Express. 2011. PMID: 21747567 Free article.

3

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

Sheu JK, Chen FB, Yen WY, Wang YC, Liu CN, Yeh YH, Lee ML. Sheu JK, et al. Opt Express. 2015 Apr 6;23(7):A371-81. doi: 10.1364/OE.23.00A371. Opt Express. 2015. PMID: 25968802 Free article.

4

High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

Ra YH, Navamathavan R, Park JH, Lee CR. Ra YH, et al. ACS Appl Mater Interfaces. 2013 Mar;5(6):2111-7. doi: 10.1021/am303056v. Epub 2013 Mar 6. ACS Appl Mater Interfaces. 2013. PMID: 23432423

5

Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals.

Wei T, Huo Z, Zhang Y, Zheng H, Chen Y, Yang J, Hu Q, Duan R, Wang J, Zeng Y, Li J. Wei T, et al. Opt Express. 2014 Jun 30;22 Suppl 4:A1093-100. doi: 10.1364/OE.22.0A1093. Opt Express. 2014. PMID: 24978072 Free article.

6

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK. Yang YC, et al. Opt Express. 2012 Nov 5;20(23):A1019-25. Opt Express. 2012. PMID: 23326851 Free article.

7

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Yang YC, Sheu JK, Lee ML, Yen CH, Lai WC, Hon SJ, Ko TK. Yang YC, et al. Opt Express. 2012 Nov 5;20 Suppl 6:A1019-25. doi: 10.1364/OE.20.0A1019. Opt Express. 2012. PMID: 23187653 Free article.

8

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK. Yang YC, et al. Opt Express. 2012 Jan 2;20(1):A119-24. doi: 10.1364/oe.20.00a119. Opt Express. 2012. PMID: 22379672 Free article.

9

MgO nano-pyramids structure for enhancement of light extraction efficiency in vertical light-emitting diodes.

Son JH, Yu HK, Lee JL. Son JH, et al. Opt Express. 2010 Sep 13;18 Suppl 3:A403-10. doi: 10.1364/OE.18.00A403. Opt Express. 2010. PMID: 21165070 Free article.

10

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.

Tien CH, Chen KY, Hsu CP, Horng RH. Tien CH, et al. Opt Express. 2014 Oct 20;22 Suppl 6:A1462-8. doi: 10.1364/OE.22.0A1462. Opt Express. 2014. PMID: 25607303 Free article.

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Results by year

Text availability

Article attribute

Article type

Publication date

436 results

Results by year