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Items: 1 to 20 of 78

1.

Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN.

de Boer WD, McGonigle C, Gregorkiewicz T, Fujiwara Y, Tanabe S, Stallinga P.

Sci Rep. 2014 Jun 10;4:5235. doi: 10.1038/srep05235.

2.

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers.

Ho VX, Dao TV, Jiang HX, Lin JY, Zavada JM, McGill SA, Vinh NQ.

Sci Rep. 2017 Jan 5;7:39997. doi: 10.1038/srep39997.

3.

Optical and structural properties of an Eu implanted gallium nitride quantum dots/aluminium nitride superlattice.

Peres M, Neves AJ, Monteiro T, Magalhães S, Franco N, Lorenz K, Alves E, Damilano B, Massies J, Dussaigne A, Grandjean N.

J Nanosci Nanotechnol. 2010 Apr;10(4):2473-8.

PMID:
20355450
4.

Defect roles in the excitation of Eu ions in Eu:GaN.

Poplawsky JD, Nishikawa A, Fujiwara Y, Dierolf V.

Opt Express. 2013 Dec 16;21(25):30633-41. doi: 10.1364/OE.21.030633.

PMID:
24514639
5.

Optical excitation cross section of erbium in GaN.

Feng IW, Li J, Lin J, Jiang H, Zavada J.

Appl Opt. 2013 Feb 20;52(6):1132-5. doi: 10.1364/AO.52.001132.

PMID:
23434981
6.

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.

Albert S, Bengoechea-Encabo A, Sánchez-García MA, Kong X, Trampert A, Calleja E.

Nanotechnology. 2013 May 3;24(17):175303. doi: 10.1088/0957-4484/24/17/175303. Epub 2013 Apr 4.

PMID:
23558410
7.

Photoluminescence properties of Eu(3+)-doped glaserite-type orthovanadates CsK(2)Gd[VO(4)](2).

Tao Z, Tsuboi T, Huang Y, Huang W, Cai P, Seo HJ.

Inorg Chem. 2014 Apr 21;53(8):4161-8. doi: 10.1021/ic500208h. Epub 2014 Apr 7.

PMID:
24708358
8.

Induced magnetic moment of Eu(3+) ions in GaN.

Kachkanov V, Wallace MJ, van der Laan G, Dhesi SS, Cavill SA, Fujiwara Y, O'Donnell KP.

Sci Rep. 2012;2:969. doi: 10.1038/srep00969. Epub 2012 Dec 12.

9.

Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination.

Peres M, Magalhães S, Fellmann V, Daudin B, Neves AJ, Alves E, Lorenz K, Monteiro T.

Nanoscale Res Lett. 2011 May 9;6(1):378. doi: 10.1186/1556-276X-6-378.

10.

The thermal stabilities of luminescence and microstructures of Eu2+-doped KBaPO4 and NaSrPO4 with β-K2SO4 type structure.

Zhang S, Nakai Y, Tsuboi T, Huang Y, Seo HJ.

Inorg Chem. 2011 Apr 4;50(7):2897-904. doi: 10.1021/ic102504x. Epub 2011 Feb 28.

PMID:
21355563
11.

Improved photoluminescence and ferroelectric properties of (Bi(3.6)Eu(0.4))Ti₃O₁₂ thin films via Li+ doping.

Zhou H, Wu G, Gao F, Qin N, Bao D.

IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Oct;57(10):2134-7. doi: 10.1109/TUFFC.2010.1669.

PMID:
20889396
12.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

Fragkos IE, Dierolf V, Fujiwara Y, Tansu N.

Sci Rep. 2017 Dec 1;7(1):16773. doi: 10.1038/s41598-017-17033-6.

13.

Synthesis and photoluminescence properties of Ce3+ and Eu2+-activated Ca7Mg(SiO4)4 phosphors for solid state lighting.

Jia Y, Qiao H, Zheng Y, Guo N, You H.

Phys Chem Chem Phys. 2012 Mar 14;14(10):3537-42. doi: 10.1039/c2cp23343f. Epub 2012 Feb 3.

PMID:
22307171
14.

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection.

Huang FW, Sheu JK, Lee ML, Tu SJ, Lai WC, Tsai WC, Chang WH.

Opt Express. 2011 Nov 7;19 Suppl 6:A1211-8. doi: 10.1364/OE.19.0A1211.

PMID:
22109617
15.

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.

Jacopin G, Rigutti L, Bellei S, Lavenus P, Julien FH, Davydov AV, Tsvetkov D, Bertness KA, Sanford NA, Schlager JB, Tchernycheva M.

Nanotechnology. 2012 Aug 17;23(32):325701. doi: 10.1088/0957-4484/23/32/325701. Epub 2012 Jul 17.

PMID:
22802219
16.

Efficient doping and energy transfer from ZnO to Eu3+ ions in Eu(3+)-doped ZnO nanocrystals.

Luo L, Huang FY, Guo GJ, Tanner PA, Chen J, Tao YT, Zhou J, Yuan LY, Chen SY, Chueh YL, Fan HH, Li KF, Cheah KW.

J Nanosci Nanotechnol. 2012 Mar;12(3):2417-23.

PMID:
22755068
17.

Temperature dependent luminescence and energy transfer properties of Na2SrMg(PO4)2:Eu2+, Mn2+ phosphors.

Geng D, Shang M, Zhang Y, Lian H, Lin J.

Dalton Trans. 2013 Nov 21;42(43):15372-80. doi: 10.1039/c3dt51670a.

PMID:
24005651
18.

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.

You G, Liu J, Jiang Z, Wang L, El-Masry NA, Hosalli AM, Bedair SM, Xu J.

Opt Lett. 2014 Mar 15;39(6):1501-4. doi: 10.1364/OL.39.001501.

PMID:
24690823
19.

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes.

Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N.

Sci Rep. 2017 Nov 7;7(1):14648. doi: 10.1038/s41598-017-15302-y.

20.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ra YH, Navamathavan R, Park JH, Lee CR.

Nano Lett. 2013 Aug 14;13(8):3506-16. doi: 10.1021/nl400906r. Epub 2013 May 28.

PMID:
23701263

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